Journal article 1099 views
3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
Karol Kalna 
Solid-State Electronics, Volume: 69, Start page: 43
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1016/j.sse.2011.11.031
Abstract
3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
| Published in: | Solid-State Electronics |
|---|---|
| ISSN: | 0038-1101 |
| Published: |
2012
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa12692 |
| College: |
Faculty of Science and Engineering |
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| Start Page: |
43 |