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3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs

Karol Kalna Orcid Logo

Solid-State Electronics, Volume: 69, Start page: 43

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1016/j.sse.2011.11.031

Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2012
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URI: https://cronfa.swan.ac.uk/Record/cronfa12692
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first_indexed 2013-07-23T12:08:34Z
last_indexed 2018-02-09T04:43:07Z
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spelling 2015-05-31T17:55:39.4986395 v2 12692 2013-09-03 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article Solid-State Electronics 69 43 0038-1101 31 12 2012 2012-12-31 10.1016/j.sse.2011.11.031 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-31T17:55:39.4986395 2013-09-03T06:36:32.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Karol Kalna 0000-0002-6333-9189 1
title 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
spellingShingle 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
Karol Kalna
title_short 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
title_full 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
title_fullStr 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
title_full_unstemmed 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
title_sort 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Karol Kalna
format Journal article
container_title Solid-State Electronics
container_volume 69
container_start_page 43
publishDate 2012
institution Swansea University
issn 0038-1101
doi_str_mv 10.1016/j.sse.2011.11.031
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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active_str 0
published_date 2012-12-31T03:14:36Z
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score 11.037603

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