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The Effect of Gate Scaling on Drain Current in Ultra-Scaled Nanosheet and Nanowire FETs: A 3D Monte Carlo Simulation Study

Murad Alabdullah, N. Seoane Orcid Logo, A. J. Garcia-Loureiro Orcid Logo, Karol Kalna Orcid Logo

IEEE Journal of the Electron Devices Society, Volume: 14, Pages: 324 - 334

Swansea University Authors: Murad Alabdullah, Karol Kalna Orcid Logo

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Abstract

The gate scaling to an ultimate length of 8 nm in Si nanosheet (NS) and nanowire (NW) field-effect transistors (FETs) results in a notable reduction in the drain drive current ( IDD ), despite conventional scaling theory predicting an increase. Using advanced 3D finite element ensemble Monte Carlo (...

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Published in: IEEE Journal of the Electron Devices Society
ISSN: 2168-6734
Published: Institute of Electrical and Electronics Engineers (IEEE) 2026
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa72178
Abstract: The gate scaling to an ultimate length of 8 nm in Si nanosheet (NS) and nanowire (NW) field-effect transistors (FETs) results in a notable reduction in the drain drive current ( IDD ), despite conventional scaling theory predicting an increase. Using advanced 3D finite element ensemble Monte Carlo (MC) simulations with Schrödinger equation quantum corrections, we investigate the impact of gate scaling from 22 nm to 8 nm in gate-all-around (GAA) NS and NW FETs. Our results indicate that while IDD initially increases for a gate length scaled from 22 nm to 16 nm as expected, further scaling to sub-16 nm lengths leads to a decline of up to 18% in NS FETs and 20% in NW FETs at 8 nm. This IDD reduction is mainly due to enhanced long-range Coulomb interactions between the source and the drain, inducing fringing electric fields at the source gate-edge in addition to already present fringing electric fields at the drain gate-edge, leading to increased channel back-scattering.
Keywords: Nanosheet FET, nanowire FET, quantum confinement, fringing electric fields, backscattering effects
College: Faculty of Science and Engineering
Start Page: 324
End Page: 334