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The Effect of Gate Scaling on Drain Current in Ultra-Scaled Nanosheet and Nanowire FETs: A 3D Monte Carlo Simulation Study
IEEE Journal of the Electron Devices Society, Volume: 14, Pages: 324 - 334
Swansea University Authors:
Murad Alabdullah, Karol Kalna
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2026 The Authors. This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
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DOI (Published version): 10.1109/jeds.2026.3694652
Abstract
The gate scaling to an ultimate length of 8 nm in Si nanosheet (NS) and nanowire (NW) field-effect transistors (FETs) results in a notable reduction in the drain drive current ( IDD ), despite conventional scaling theory predicting an increase. Using advanced 3D finite element ensemble Monte Carlo (...
| Published in: | IEEE Journal of the Electron Devices Society |
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| ISSN: | 2168-6734 |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2026
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa72178 |
| Abstract: |
The gate scaling to an ultimate length of 8 nm in Si nanosheet (NS) and nanowire (NW) field-effect transistors (FETs) results in a notable reduction in the drain drive current ( IDD ), despite conventional scaling theory predicting an increase. Using advanced 3D finite element ensemble Monte Carlo (MC) simulations with Schrödinger equation quantum corrections, we investigate the impact of gate scaling from 22 nm to 8 nm in gate-all-around (GAA) NS and NW FETs. Our results indicate that while IDD initially increases for a gate length scaled from 22 nm to 16 nm as expected, further scaling to sub-16 nm lengths leads to a decline of up to 18% in NS FETs and 20% in NW FETs at 8 nm. This IDD reduction is mainly due to enhanced long-range Coulomb interactions between the source and the drain, inducing fringing electric fields at the source gate-edge in addition to already present fringing electric fields at the drain gate-edge, leading to increased channel back-scattering. |
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| Keywords: |
Nanosheet FET, nanowire FET, quantum confinement, fringing electric fields, backscattering effects |
| College: |
Faculty of Science and Engineering |
| Start Page: |
324 |
| End Page: |
334 |

