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Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications

Alfred Moore, Yaonan Hou Orcid Logo, Lijie Li Orcid Logo

Nanomaterials, Volume: 15, Issue: 17, Start page: 1365

Swansea University Authors: Alfred Moore, Yaonan Hou Orcid Logo, Lijie Li Orcid Logo

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DOI (Published version): 10.3390/nano15171365

Abstract

Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the e...

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Published in: Nanomaterials
ISSN: 2079-4991
Published: MDPI AG 2025
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URI: https://cronfa.swan.ac.uk/Record/cronfa70262
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last_indexed 2025-09-30T08:56:15Z
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spelling 2025-09-29T17:00:12.7177014 v2 70262 2025-09-04 Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications 93e4e3bb295fbfa7f11e013a0ec75d8c Alfred Moore Alfred Moore true false 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2025-09-04 ACEM Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the evolution of memristor theory for Ga2O3-based materials, emphasising capacitive memristors and their ability to integrate resistive and capacitive switching mechanisms for multifunctional performance. We discussed the state-of-the-art fabrication methods, material engineering strategies, and the current challenges of Ga2O3-based memristors. The review also highlights the applications of these memristors in memory technologies, neuromorphic computing, and sensors, showcasing their potential to revolutionise emerging electronics. Special focus has been placed on the use of Ga2O3 in capacitive memristors, where their properties enable improved switching speed, endurance, and stability. In this paper we provide a comprehensive overview of the advancements in Ga2O3-based memristors and outline pathways for future research in this rapidly evolving field. Journal Article Nanomaterials 15 17 1365 MDPI AG 2079-4991 capacitive switching; resistive switching; ON/OFF ratios; oxygen vacancy 4 9 2025 2025-09-04 10.3390/nano15171365 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) This research was funded by the EPSRC under Grant No. EP/T019085/1, the Royal Society under Grant No. IEC/NSFC/242145, and the Royal Society under Grant No. IEC/NSFC/223336. 2025-09-29T17:00:12.7177014 2025-09-04T16:01:46.6957937 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Alfred Moore 1 Yaonan Hou 0000-0001-9461-3841 2 Lijie Li 0000-0003-4630-7692 3 70262__35206__4c56476049f94ece90b3802edb0d6ecd.pdf 70262.VoR.pdf 2025-09-29T16:56:23.5136118 Output 2287463 application/pdf Version of Record true © 2025 by the authors. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
spellingShingle Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
Alfred Moore
Yaonan Hou
Lijie Li
title_short Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
title_full Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
title_fullStr Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
title_full_unstemmed Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
title_sort Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
author_id_str_mv 93e4e3bb295fbfa7f11e013a0ec75d8c
113975f710084997abdb26ad5fa03e8e
ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv 93e4e3bb295fbfa7f11e013a0ec75d8c_***_Alfred Moore
113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Alfred Moore
Yaonan Hou
Lijie Li
author2 Alfred Moore
Yaonan Hou
Lijie Li
format Journal article
container_title Nanomaterials
container_volume 15
container_issue 17
container_start_page 1365
publishDate 2025
institution Swansea University
issn 2079-4991
doi_str_mv 10.3390/nano15171365
publisher MDPI AG
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the evolution of memristor theory for Ga2O3-based materials, emphasising capacitive memristors and their ability to integrate resistive and capacitive switching mechanisms for multifunctional performance. We discussed the state-of-the-art fabrication methods, material engineering strategies, and the current challenges of Ga2O3-based memristors. The review also highlights the applications of these memristors in memory technologies, neuromorphic computing, and sensors, showcasing their potential to revolutionise emerging electronics. Special focus has been placed on the use of Ga2O3 in capacitive memristors, where their properties enable improved switching speed, endurance, and stability. In this paper we provide a comprehensive overview of the advancements in Ga2O3-based memristors and outline pathways for future research in this rapidly evolving field.
published_date 2025-09-04T06:49:12Z
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