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A capacitance-coupled Ga2O3 memristor

Alfred Moore Orcid Logo, Lijie Li Orcid Logo, Hang Shao, Xiaoyan Tang, Huili Liang, Zengxia Mei, Yaonan Hou Orcid Logo

AIP Advances, Volume: 15, Issue: 4

Swansea University Authors: Lijie Li Orcid Logo, Yaonan Hou Orcid Logo

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DOI (Published version): 10.1063/5.0260023

Abstract

Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memr...

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Published in: AIP Advances
ISSN: 2158-3226
Published: AIP Publishing 2025
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa69144
Abstract: Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network.
College: Faculty of Science and Engineering
Funders: This work was supported by the EPSRC under Grant No. EP/T019085/1, Royal Society under Grant No. IEC\NSFC\242145, and SACEME Seedcorn funding from Swansea University. H.L. and Z.M. thank the National Natural Science Foundation of China for the support under Grant Nos. 12174275 and 62174113.
Issue: 4

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