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A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges

ALFRED MOORE, Saqib Rafique, Ciaran Llewelyn Orcid Logo, Dan Lamb Orcid Logo, Lijie Li Orcid Logo

Advanced Electronic Materials, Volume: 11, Issue: 9, Start page: 2400898

Swansea University Authors: ALFRED MOORE, Saqib Rafique, Ciaran Llewelyn Orcid Logo, Dan Lamb Orcid Logo, Lijie Li Orcid Logo

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DOI (Published version): 10.1002/aelm.202400898

Abstract

In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limit...

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Published in: Advanced Electronic Materials
ISSN: 2199-160X 2199-160X
Published: Wiley 2025
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URI: https://cronfa.swan.ac.uk/Record/cronfa68792
first_indexed 2025-02-04T10:37:17Z
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spelling 2025-07-08T12:12:06.9699985 v2 68792 2025-02-04 A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges 9bdae00cc76390cf9e6322cb13c23fa0 ALFRED MOORE ALFRED MOORE true false 24fba91f85bf6f1f17145e84bf1b32d9 Saqib Rafique Saqib Rafique true false 91e58657b172ff1c49c86599dd049d72 0009-0005-4074-5204 Ciaran Llewelyn Ciaran Llewelyn true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2025-02-04 In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limitations of Ga₂O₃ as a standalone material—most notably, its lack of p-type doping capability. One of the key application areas for Ga₂O₃ and its heterojunctions is ultraviolet (UV) photodetection, which has gained significant attention yet remains a relatively nascent field with vast potential for further exploration and optimization. This review provides a detailed overview of the current state-of-the-art in Ga₂O₃ technology, highlighting recent research advancements, key challenges, and emerging strategies aimed at overcoming these challenges. Specifically, it examines Ga₂O₃ heterojunctions for deep-UV photodetection, analysing compatible electrode materials and assessing various substrates suitable for Ga₂O₃ growth to enhance device performance. This comprehensive review is designed to serve as an essential resource for researchers and engineers working with Ga₂O₃-based heterojunctions, especially for applications in UV photodetection. Written with the needs of new entrants in mind, it aims to build a robust foundational understanding of Ga₂O₃ technology, supporting ongoing innovation and application expansion in this field. Journal Article Advanced Electronic Materials 11 9 2400898 Wiley 2199-160X 2199-160X Ga₂O₃, heterojunction, optoelectronics, review 1 6 2025 2025-06-01 10.1002/aelm.202400898 Review COLLEGE NANME COLLEGE CODE Swansea University SU Library paid the OA fee (TA Institutional Deal) Engineering and Physical Sciences Research Council (Grant Number: EP/T019085/1) 2025-07-08T12:12:06.9699985 2025-02-04T10:33:10.5647097 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering ALFRED MOORE 1 Saqib Rafique 2 Ciaran Llewelyn 0009-0005-4074-5204 3 Dan Lamb 0000-0002-4762-4641 4 Lijie Li 0000-0003-4630-7692 5 68792__33629__919a4ebb5db04ebfb3e1ecb17004081e.pdf 68792.VOR.pdf 2025-02-18T13:26:30.8048560 Output 3726488 application/pdf Version of Record true © 2025 The Author(s). This is an open access article under the terms of the Creative Commons Attribution License (CC BY 4.0). true eng http://creativecommons.org/licenses/by/4.0/
title A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
spellingShingle A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
ALFRED MOORE
Saqib Rafique
Ciaran Llewelyn
Dan Lamb
Lijie Li
title_short A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
title_full A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
title_fullStr A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
title_full_unstemmed A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
title_sort A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
author_id_str_mv 9bdae00cc76390cf9e6322cb13c23fa0
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author_id_fullname_str_mv 9bdae00cc76390cf9e6322cb13c23fa0_***_ALFRED MOORE
24fba91f85bf6f1f17145e84bf1b32d9_***_Saqib Rafique
91e58657b172ff1c49c86599dd049d72_***_Ciaran Llewelyn
decd92a653848a357f0c6f8e38e0aea0_***_Dan Lamb
ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author ALFRED MOORE
Saqib Rafique
Ciaran Llewelyn
Dan Lamb
Lijie Li
author2 ALFRED MOORE
Saqib Rafique
Ciaran Llewelyn
Dan Lamb
Lijie Li
format Journal article
container_title Advanced Electronic Materials
container_volume 11
container_issue 9
container_start_page 2400898
publishDate 2025
institution Swansea University
issn 2199-160X
2199-160X
doi_str_mv 10.1002/aelm.202400898
publisher Wiley
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limitations of Ga₂O₃ as a standalone material—most notably, its lack of p-type doping capability. One of the key application areas for Ga₂O₃ and its heterojunctions is ultraviolet (UV) photodetection, which has gained significant attention yet remains a relatively nascent field with vast potential for further exploration and optimization. This review provides a detailed overview of the current state-of-the-art in Ga₂O₃ technology, highlighting recent research advancements, key challenges, and emerging strategies aimed at overcoming these challenges. Specifically, it examines Ga₂O₃ heterojunctions for deep-UV photodetection, analysing compatible electrode materials and assessing various substrates suitable for Ga₂O₃ growth to enhance device performance. This comprehensive review is designed to serve as an essential resource for researchers and engineers working with Ga₂O₃-based heterojunctions, especially for applications in UV photodetection. Written with the needs of new entrants in mind, it aims to build a robust foundational understanding of Ga₂O₃ technology, supporting ongoing innovation and application expansion in this field.
published_date 2025-06-01T05:26:26Z
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