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A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
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Dan Lamb ,
Lijie Li
Advanced Electronic Materials, Volume: 11, Issue: 9, Start page: 2400898
Swansea University Authors:
ALFRED MOORE, Saqib Rafique, Ciaran Llewelyn , Dan Lamb , Lijie Li
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DOI (Published version): 10.1002/aelm.202400898
Abstract
In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limit...
| Published in: | Advanced Electronic Materials |
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| ISSN: | 2199-160X 2199-160X |
| Published: |
Wiley
2025
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa68792 |
| Abstract: |
In recent years, gallium oxide (Ga₂O₃) has drawn considerable research interest as an ultrawide-bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga₂O₃ heterojunctions have emerged as a promising approach to address key limitations of Ga₂O₃ as a standalone material—most notably, its lack of p-type doping capability. One of the key application areas for Ga₂O₃ and its heterojunctions is ultraviolet (UV) photodetection, which has gained significant attention yet remains a relatively nascent field with vast potential for further exploration and optimization. This review provides a detailed overview of the current state-of-the-art in Ga₂O₃ technology, highlighting recent research advancements, key challenges, and emerging strategies aimed at overcoming these challenges. Specifically, it examines Ga₂O₃ heterojunctions for deep-UV photodetection, analysing compatible electrode materials and assessing various substrates suitable for Ga₂O₃ growth to enhance device performance. This comprehensive review is designed to serve as an essential resource for researchers and engineers working with Ga₂O₃-based heterojunctions, especially for applications in UV photodetection. Written with the needs of new entrants in mind, it aims to build a robust foundational understanding of Ga₂O₃ technology, supporting ongoing innovation and application expansion in this field. |
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| Item Description: |
Review |
| Keywords: |
Ga₂O₃, heterojunction, optoelectronics, review |
| College: |
Faculty of Science and Engineering |
| Funders: |
Engineering and Physical Sciences Research Council (Grant Number: EP/T019085/1) |
| Issue: |
9 |
| Start Page: |
2400898 |