Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si

Ma, Xingzhao; Tang, Libin; Jia, Menghan; Zhang, Yuping; Zuo, Wenbin; Cai, Yuhua; Li, Rui; Yang, Liqing; Teng, Vincent

doi:10.1002/aelm.202300909

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Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si

Xingzhao Ma, Libin Tang

, Menghan Jia, Yuping Zhang, Wenbin Zuo, Yuhua Cai, Rui Li, Liqing Yang, Vincent Teng

Advanced Electronic Materials, Volume: 10, Issue: 9

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1002/aelm.202300909

Abstract

Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p-NiO/n-Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a...

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Published in:	Advanced Electronic Materials
ISSN:	2199-160X 2199-160X
Published:	Wiley 2024
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa68357

first_indexed	2024-11-27T19:46:36Z
last_indexed	2025-01-13T20:34:22Z
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spelling	2025-01-13T14:38:30.8872974 v2 68357 2024-11-27 Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2024-11-27 ACEM Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p-NiO/n-Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a small valence band offset (ΔEV) at the NiO/Si interface and a high density of dangling bonds at the silicon surface. Herein, an UV HPD consisting of NiO/Al2O3/n-Si is fabricated using magnetron sputtering technique. The HPD has a large rectification ratio of 2.4 × 105. It also exhibits excellent UV responsivity (R) of 15.8 A/W at −5 V and and detectivity (D*) of 1.14 × 1013 Jones at −4 V, respectively. The excellent performance of the HPD can be attributed to the defect passivation at the interfaces of the heterojunction and the efficient separation of photogenerated carriers by the Al2O3 nanolayer. The external quantum efficiency (EQE) of the HPD as high as 5.4 × 103%, hence implying a large optical gain due to carrier proliferation resulting from impact ionization. Furthermore, the ultrafast response speed with a rise time of 80 µs and a decay time of 184 µs are obtained. Journal Article Advanced Electronic Materials 10 9 Wiley 2199-160X 2199-160X Al2O3; heterojunction; NiO; UV photodetector 1 9 2024 2024-09-01 10.1002/aelm.202300909 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee National Key Research and Development Program of China. Grant Number: 2019YFB2203404 Yunnan Province Innovation Team Project. Grant Number: 2018HC020 2025-01-13T14:38:30.8872974 2024-11-27T13:56:37.5105358 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Xingzhao Ma 1 Libin Tang 0000-0002-7174-2963 2 Menghan Jia 3 Yuping Zhang 4 Wenbin Zuo 5 Yuhua Cai 6 Rui Li 7 Liqing Yang 8 Vincent Teng 0000-0003-4325-8573 9
title	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
spellingShingle	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si Vincent Teng
title_short	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
title_full	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
title_fullStr	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
title_full_unstemmed	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
title_sort	Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si
author_id_str_mv	98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv	98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author	Vincent Teng
author2	Xingzhao Ma Libin Tang Menghan Jia Yuping Zhang Wenbin Zuo Yuhua Cai Rui Li Liqing Yang Vincent Teng
format	Journal article
container_title	Advanced Electronic Materials
container_volume	10
container_issue	9
publishDate	2024
institution	Swansea University
issn	2199-160X 2199-160X
doi_str_mv	10.1002/aelm.202300909
publisher	Wiley
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description	Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p-NiO/n-Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a small valence band offset (ΔEV) at the NiO/Si interface and a high density of dangling bonds at the silicon surface. Herein, an UV HPD consisting of NiO/Al2O3/n-Si is fabricated using magnetron sputtering technique. The HPD has a large rectification ratio of 2.4 × 105. It also exhibits excellent UV responsivity (R) of 15.8 A/W at −5 V and and detectivity (D*) of 1.14 × 1013 Jones at −4 V, respectively. The excellent performance of the HPD can be attributed to the defect passivation at the interfaces of the heterojunction and the efficient separation of photogenerated carriers by the Al2O3 nanolayer. The external quantum efficiency (EQE) of the HPD as high as 5.4 × 103%, hence implying a large optical gain due to carrier proliferation resulting from impact ionization. Furthermore, the ultrafast response speed with a rise time of 80 µs and a decay time of 184 µs are obtained.
published_date	2024-09-01T14:38:40Z
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score	11.048042

Ultrahigh Performance UV Photodetector by Inserting an Al<sub>2</sub>O<sub>3</sub> Nanolayer in NiO/n‐Si

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