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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
ACS Applied Electronic Materials, Volume: 3, Issue: 2, Pages: 813 - 824
Swansea University Author: Saptarsi Ghosh
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DOI (Published version): 10.1021/acsaelm.0c00966
Abstract
The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate its...
Published in: | ACS Applied Electronic Materials |
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ISSN: | 2637-6113 2637-6113 |
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2021
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The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate.</abstract><type>Journal Article</type><journal>ACS Applied Electronic Materials</journal><volume>3</volume><journalNumber>2</journalNumber><paginationStart>813</paginationStart><paginationEnd>824</paginationEnd><publisher>American Chemical Society (ACS)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>2637-6113</issnPrint><issnElectronic>2637-6113</issnElectronic><keywords>GaN-on-Si, GaN HEMTs, AlN nucleation, III-nitride MOVPE, parasitic conduction, RF loss</keywords><publishedDay>25</publishedDay><publishedMonth>1</publishedMonth><publishedYear>2021</publishedYear><publishedDate>2021-01-25</publishedDate><doi>10.1021/acsaelm.0c00966</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><funders>This research was supported by the Engineering and PhysicalSciences Research Council (EPSRC) under the grantInGaNET, “Integration of RF Circuits with High Speed GaNSwitching on Silicon Substrates” (EP/N017927/1) and (EP/N014820/2). A.H. acknowledges the Deutsche Forschungsge-meinschaft for his Research Fellowship at the University ofCambridge. D.J.W. acknowledges the support of EPSRCfellowship (EP/N01202X/2). The authors are grateful toPlessey Semiconductors Ltd. for performing the Si wafer back-thinning and to Christopher Richards and Robert Harper ofCompound Semiconductor Center Ltd. for performing thecontactless sheet-resistance mapping. 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v2 66876 2024-06-23 Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate. Journal Article ACS Applied Electronic Materials 3 2 813 824 American Chemical Society (ACS) 2637-6113 2637-6113 GaN-on-Si, GaN HEMTs, AlN nucleation, III-nitride MOVPE, parasitic conduction, RF loss 25 1 2021 2021-01-25 10.1021/acsaelm.0c00966 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University This research was supported by the Engineering and PhysicalSciences Research Council (EPSRC) under the grantInGaNET, “Integration of RF Circuits with High Speed GaNSwitching on Silicon Substrates” (EP/N017927/1) and (EP/N014820/2). A.H. acknowledges the Deutsche Forschungsge-meinschaft for his Research Fellowship at the University ofCambridge. D.J.W. acknowledges the support of EPSRCfellowship (EP/N01202X/2). The authors are grateful toPlessey Semiconductors Ltd. for performing the Si wafer back-thinning and to Christopher Richards and Robert Harper ofCompound Semiconductor Center Ltd. for performing thecontactless sheet-resistance mapping. S.G. thanks JagannathKuchlyan (Department of Chemistry, University of Oxford)for suggestions on the data analysis. 2024-08-15T14:30:29.3129507 2024-06-23T20:03:36.0127468 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Saptarsi Ghosh 0000-0003-1685-6228 1 Alexander Hinz 0000-0002-8845-0086 2 Simon M. Fairclough 3 Bogdan F. Spiridon 4 Abdalla Eblabla 5 Michael A. Casbon 6 Menno J. Kappers 7 Khaled Elgaid 8 Saiful Alam 9 Rachel A. Oliver 0000-0003-0029-3993 10 David J. Wallis 11 66876__31129__c86dd089cf7146a7ae39e8cd3c6d8b92.pdf 66876.VoR.pdf 2024-08-15T14:29:06.8222640 Output 4865917 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution (CC-BY) License. true eng http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html |
title |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
spellingShingle |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon Saptarsi Ghosh |
title_short |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
title_full |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
title_fullStr |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
title_full_unstemmed |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
title_sort |
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon |
author_id_str_mv |
3e247ecabd6eddd319264d066b0ce959 |
author_id_fullname_str_mv |
3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh |
author |
Saptarsi Ghosh |
author2 |
Saptarsi Ghosh Alexander Hinz Simon M. Fairclough Bogdan F. Spiridon Abdalla Eblabla Michael A. Casbon Menno J. Kappers Khaled Elgaid Saiful Alam Rachel A. Oliver David J. Wallis |
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ACS Applied Electronic Materials |
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3 |
container_issue |
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813 |
publishDate |
2021 |
institution |
Swansea University |
issn |
2637-6113 2637-6113 |
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10.1021/acsaelm.0c00966 |
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American Chemical Society (ACS) |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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description |
The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate. |
published_date |
2021-01-25T14:30:28Z |
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1807460469886156800 |
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11.027297 |