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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Saptarsi Ghosh Orcid Logo, Alexander Hinz Orcid Logo, Simon M. Fairclough, Bogdan F. Spiridon, Abdalla Eblabla, Michael A. Casbon, Menno J. Kappers, Khaled Elgaid, Saiful Alam, Rachel A. Oliver Orcid Logo, David J. Wallis

ACS Applied Electronic Materials, Volume: 3, Issue: 2, Pages: 813 - 824

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1021/acsaelm.0c00966

Abstract

The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate its...

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Published in: ACS Applied Electronic Materials
ISSN: 2637-6113 2637-6113
Published: American Chemical Society (ACS) 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa66876
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The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. 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spelling 2024-08-15T14:30:29.3129507 v2 66876 2024-06-23 Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate. Journal Article ACS Applied Electronic Materials 3 2 813 824 American Chemical Society (ACS) 2637-6113 2637-6113 GaN-on-Si, GaN HEMTs, AlN nucleation, III-nitride MOVPE, parasitic conduction, RF loss 25 1 2021 2021-01-25 10.1021/acsaelm.0c00966 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University This research was supported by the Engineering and PhysicalSciences Research Council (EPSRC) under the grantInGaNET, “Integration of RF Circuits with High Speed GaNSwitching on Silicon Substrates” (EP/N017927/1) and (EP/N014820/2). A.H. acknowledges the Deutsche Forschungsge-meinschaft for his Research Fellowship at the University ofCambridge. D.J.W. acknowledges the support of EPSRCfellowship (EP/N01202X/2). The authors are grateful toPlessey Semiconductors Ltd. for performing the Si wafer back-thinning and to Christopher Richards and Robert Harper ofCompound Semiconductor Center Ltd. for performing thecontactless sheet-resistance mapping. S.G. thanks JagannathKuchlyan (Department of Chemistry, University of Oxford)for suggestions on the data analysis. 2024-08-15T14:30:29.3129507 2024-06-23T20:03:36.0127468 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Saptarsi Ghosh 0000-0003-1685-6228 1 Alexander Hinz 0000-0002-8845-0086 2 Simon M. Fairclough 3 Bogdan F. Spiridon 4 Abdalla Eblabla 5 Michael A. Casbon 6 Menno J. Kappers 7 Khaled Elgaid 8 Saiful Alam 9 Rachel A. Oliver 0000-0003-0029-3993 10 David J. Wallis 11 66876__31129__c86dd089cf7146a7ae39e8cd3c6d8b92.pdf 66876.VoR.pdf 2024-08-15T14:29:06.8222640 Output 4865917 application/pdf Version of Record true This is an open access article published under a Creative Commons Attribution (CC-BY) License. true eng http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html
title Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
spellingShingle Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Saptarsi Ghosh
title_short Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
title_full Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
title_fullStr Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
title_full_unstemmed Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
title_sort Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Saptarsi Ghosh
Alexander Hinz
Simon M. Fairclough
Bogdan F. Spiridon
Abdalla Eblabla
Michael A. Casbon
Menno J. Kappers
Khaled Elgaid
Saiful Alam
Rachel A. Oliver
David J. Wallis
format Journal article
container_title ACS Applied Electronic Materials
container_volume 3
container_issue 2
container_start_page 813
publishDate 2021
institution Swansea University
issn 2637-6113
2637-6113
doi_str_mv 10.1021/acsaelm.0c00966
publisher American Chemical Society (ACS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An n-type layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate.
published_date 2021-01-25T08:26:15Z
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score 11.047306

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