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The thermal stability of epitaxial GeSn layers
APL Materials, Volume: 6, Issue: 7, Start page: 076108
Swansea University Author: Yaonan Hou
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DOI (Published version): 10.1063/1.5036728
Abstract
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by...
Published in: | APL Materials |
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ISSN: | 2166-532X |
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AIP Publishing
2018
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URI: | https://cronfa.swan.ac.uk/Record/cronfa65296 |
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2024-04-09T15:00:34.1926698 v2 65296 2023-12-14 The thermal stability of epitaxial GeSn layers 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2023-12-14 ACEM We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed. Journal Article APL Materials 6 7 076108 AIP Publishing 2166-532X 30 7 2018 2018-07-30 10.1063/1.5036728 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee The authors acknowledge financial support by the BMBF in frame of the M-ERA.NET project GESNAPHOTOandsupportbytheGermanResearchFoundation(DFG)throughtheproject“SiGeSn Laser for Silicon Photonics.” 2024-04-09T15:00:34.1926698 2023-12-14T16:15:34.6672797 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering P. Zaumseil 1 Yaonan Hou 0000-0001-9461-3841 2 M. A. Schubert 3 N. von den Driesch 4 D. Stange 5 D. Rainko 6 M. Virgilio 7 D. Buca 8 G. Capellini 9 65296__29962__6267f976525c4b2ab68ad75cf88ab3e7.pdf 65296.VOR.pdf 2024-04-09T14:59:33.5117598 Output 3223671 application/pdf Version of Record true © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative CommonsAttribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/ |
title |
The thermal stability of epitaxial GeSn layers |
spellingShingle |
The thermal stability of epitaxial GeSn layers Yaonan Hou |
title_short |
The thermal stability of epitaxial GeSn layers |
title_full |
The thermal stability of epitaxial GeSn layers |
title_fullStr |
The thermal stability of epitaxial GeSn layers |
title_full_unstemmed |
The thermal stability of epitaxial GeSn layers |
title_sort |
The thermal stability of epitaxial GeSn layers |
author_id_str_mv |
113975f710084997abdb26ad5fa03e8e |
author_id_fullname_str_mv |
113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou |
author |
Yaonan Hou |
author2 |
P. Zaumseil Yaonan Hou M. A. Schubert N. von den Driesch D. Stange D. Rainko M. Virgilio D. Buca G. Capellini |
format |
Journal article |
container_title |
APL Materials |
container_volume |
6 |
container_issue |
7 |
container_start_page |
076108 |
publishDate |
2018 |
institution |
Swansea University |
issn |
2166-532X |
doi_str_mv |
10.1063/1.5036728 |
publisher |
AIP Publishing |
college_str |
Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
document_store_str |
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description |
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed. |
published_date |
2018-07-30T02:45:02Z |
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1821371796259078144 |
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11.04748 |