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Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs / MENGSTEAB TESFAMARIAM

Swansea University Author: MENGSTEAB TESFAMARIAM

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Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSF ET s) and Insu-lated Gate Bipolar Transistor (IGBT s); both are the state-of-the-art semiconductor switching devices.In this study an in-depth study of Metal Oxide Semiconductor (MOS) physics, cell structure and electrical characterization of MO...

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Published: Swansea 2022
Institution: Swansea University
Degree level: Master of Research
Degree name: MSc by Research
Supervisor: Jennings, Mike
URI: https://cronfa.swan.ac.uk/Record/cronfa62148
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first_indexed 2022-12-08T14:56:57Z
last_indexed 2023-01-13T19:23:25Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2022-12-08T15:07:40.6101379</datestamp><bib-version>v2</bib-version><id>62148</id><entry>2022-12-08</entry><title>Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs</title><swanseaauthors><author><sid>2754379885b9e4ec1c94734160dd9acb</sid><firstname>MENGSTEAB</firstname><surname>TESFAMARIAM</surname><name>MENGSTEAB TESFAMARIAM</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2022-12-08</date><abstract>Metal Oxide Semiconductor Field E&#xFB00;ect Transistor (MOSF ET s) and Insu-lated Gate Bipolar Transistor (IGBT s); both are the state-of-the-art semiconductor switching devices.In this study an in-depth study of Metal Oxide Semiconductor (MOS) physics, cell structure and electrical characterization of MOSFETs and IGBTs has been con-ducted. The aim is to achieve a further improvement on the reliability and rugged-ness of these power electronic devices using &#xFB01;ndings of the research. These power devices have an extensive industrial and domestic applications, they are the building blocks of nearly all types of power electronic circuits, control systems and advanced digital data storages, laptop and phone chargers, motor drives in electric vehicle, PV converters, Wind converters, industrial heaters. Power electronic monitoring systems including DC to DC converters, DC to AC inverters, AC to DC recti&#xFB01;ers and AC to AC converter.Silvaco simulation and MATLAB modeling enabled the research to gain a vivid understanding of device operation MOS physics and all relevant electrical charac-teristics. The practical experiment side of the research includes high power semi-conductor devices characterization; testing of fabricated discrete devices comprising:(200V, 40A Silicon MOSFET; 1.2KV, 19A Silicon Carbide MOSFET; 600V, 20A and 40A Silicon IGBT; 1.2KV, 25A Silicon IGBT). Consequently, the research work gained an insight to the semiconductor switching latest technologies that are useful for the optimization consideration of power electronic devices. Observations from published journals enabled to see the existing relevant research gaps and works car-ried out by other scientists around this &#xFB01;eld area. Silicon is the working material for this master&#x2019;s by research thesis. Moreover, this paper also looks into the great bene&#xFB01;ts of using silicon-carbide as a material for the next generation technological innovations.Therefore, this research contributes towards device optimization in the following way:Firstly, at a single cell design level. Shielded trench gate geometry architecture outperforms planar gate structure. Secondly, fabricating using a Wide-band-gap material (WBG) enhances device performance greatly.</abstract><type>E-Thesis</type><journal/><volume/><journalNumber/><paginationStart/><paginationEnd/><publisher/><placeOfPublication>Swansea</placeOfPublication><isbnPrint/><isbnElectronic/><issnPrint/><issnElectronic/><keywords>MOSFETs; IGBTs; MOS Physics; MATLAB modelling; Silvaco simulation; Device transfer, output and breakdown voltage Characterization</keywords><publishedDay>2</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2022</publishedYear><publishedDate>2022-12-02</publishedDate><doi/><url/><notes/><college>COLLEGE NANME</college><CollegeCode>COLLEGE CODE</CollegeCode><institution>Swansea University</institution><supervisor>Jennings, Mike</supervisor><degreelevel>Master of Research</degreelevel><degreename>MSc by Research</degreename><degreesponsorsfunders>KESS 2 Scholarship jointly with Newport wafer fab</degreesponsorsfunders><apcterm/><funders/><projectreference/><lastEdited>2022-12-08T15:07:40.6101379</lastEdited><Created>2022-12-08T14:54:01.7553283</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Uncategorised</level></path><authors><author><firstname>MENGSTEAB</firstname><surname>TESFAMARIAM</surname><order>1</order></author></authors><documents><document><filename>62148__26045__c7282f1f430b4fbfbbb33d77c126a809.pdf</filename><originalFilename>Tesfamariam_Mengsteab_MSc_Research_Thesis_Final_Redacted_Cronfa.pdf</originalFilename><uploaded>2022-12-08T15:01:19.4517433</uploaded><type>Output</type><contentLength>12842342</contentLength><contentType>application/pdf</contentType><version>E-Thesis &#x2013; open access</version><cronfaStatus>true</cronfaStatus><documentNotes>Copyright: The author, Mengsteab Tesfamariam, 2022.</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2022-12-08T15:07:40.6101379 v2 62148 2022-12-08 Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs 2754379885b9e4ec1c94734160dd9acb MENGSTEAB TESFAMARIAM MENGSTEAB TESFAMARIAM true false 2022-12-08 Metal Oxide Semiconductor Field Effect Transistor (MOSF ET s) and Insu-lated Gate Bipolar Transistor (IGBT s); both are the state-of-the-art semiconductor switching devices.In this study an in-depth study of Metal Oxide Semiconductor (MOS) physics, cell structure and electrical characterization of MOSFETs and IGBTs has been con-ducted. The aim is to achieve a further improvement on the reliability and rugged-ness of these power electronic devices using findings of the research. These power devices have an extensive industrial and domestic applications, they are the building blocks of nearly all types of power electronic circuits, control systems and advanced digital data storages, laptop and phone chargers, motor drives in electric vehicle, PV converters, Wind converters, industrial heaters. Power electronic monitoring systems including DC to DC converters, DC to AC inverters, AC to DC rectifiers and AC to AC converter.Silvaco simulation and MATLAB modeling enabled the research to gain a vivid understanding of device operation MOS physics and all relevant electrical charac-teristics. The practical experiment side of the research includes high power semi-conductor devices characterization; testing of fabricated discrete devices comprising:(200V, 40A Silicon MOSFET; 1.2KV, 19A Silicon Carbide MOSFET; 600V, 20A and 40A Silicon IGBT; 1.2KV, 25A Silicon IGBT). Consequently, the research work gained an insight to the semiconductor switching latest technologies that are useful for the optimization consideration of power electronic devices. Observations from published journals enabled to see the existing relevant research gaps and works car-ried out by other scientists around this field area. Silicon is the working material for this master’s by research thesis. Moreover, this paper also looks into the great benefits of using silicon-carbide as a material for the next generation technological innovations.Therefore, this research contributes towards device optimization in the following way:Firstly, at a single cell design level. Shielded trench gate geometry architecture outperforms planar gate structure. Secondly, fabricating using a Wide-band-gap material (WBG) enhances device performance greatly. E-Thesis Swansea MOSFETs; IGBTs; MOS Physics; MATLAB modelling; Silvaco simulation; Device transfer, output and breakdown voltage Characterization 2 12 2022 2022-12-02 COLLEGE NANME COLLEGE CODE Swansea University Jennings, Mike Master of Research MSc by Research KESS 2 Scholarship jointly with Newport wafer fab 2022-12-08T15:07:40.6101379 2022-12-08T14:54:01.7553283 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised MENGSTEAB TESFAMARIAM 1 62148__26045__c7282f1f430b4fbfbbb33d77c126a809.pdf Tesfamariam_Mengsteab_MSc_Research_Thesis_Final_Redacted_Cronfa.pdf 2022-12-08T15:01:19.4517433 Output 12842342 application/pdf E-Thesis – open access true Copyright: The author, Mengsteab Tesfamariam, 2022. true eng
title Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
spellingShingle Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
MENGSTEAB TESFAMARIAM
title_short Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
title_full Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
title_fullStr Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
title_full_unstemmed Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
title_sort Testing Methodologies for Power Electronic Devices With focus on MOSFETs and IGBTs
author_id_str_mv 2754379885b9e4ec1c94734160dd9acb
author_id_fullname_str_mv 2754379885b9e4ec1c94734160dd9acb_***_MENGSTEAB TESFAMARIAM
author MENGSTEAB TESFAMARIAM
author2 MENGSTEAB TESFAMARIAM
format E-Thesis
publishDate 2022
institution Swansea University
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
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description Metal Oxide Semiconductor Field Effect Transistor (MOSF ET s) and Insu-lated Gate Bipolar Transistor (IGBT s); both are the state-of-the-art semiconductor switching devices.In this study an in-depth study of Metal Oxide Semiconductor (MOS) physics, cell structure and electrical characterization of MOSFETs and IGBTs has been con-ducted. The aim is to achieve a further improvement on the reliability and rugged-ness of these power electronic devices using findings of the research. These power devices have an extensive industrial and domestic applications, they are the building blocks of nearly all types of power electronic circuits, control systems and advanced digital data storages, laptop and phone chargers, motor drives in electric vehicle, PV converters, Wind converters, industrial heaters. Power electronic monitoring systems including DC to DC converters, DC to AC inverters, AC to DC rectifiers and AC to AC converter.Silvaco simulation and MATLAB modeling enabled the research to gain a vivid understanding of device operation MOS physics and all relevant electrical charac-teristics. The practical experiment side of the research includes high power semi-conductor devices characterization; testing of fabricated discrete devices comprising:(200V, 40A Silicon MOSFET; 1.2KV, 19A Silicon Carbide MOSFET; 600V, 20A and 40A Silicon IGBT; 1.2KV, 25A Silicon IGBT). Consequently, the research work gained an insight to the semiconductor switching latest technologies that are useful for the optimization consideration of power electronic devices. Observations from published journals enabled to see the existing relevant research gaps and works car-ried out by other scientists around this field area. Silicon is the working material for this master’s by research thesis. Moreover, this paper also looks into the great benefits of using silicon-carbide as a material for the next generation technological innovations.Therefore, this research contributes towards device optimization in the following way:Firstly, at a single cell design level. Shielded trench gate geometry architecture outperforms planar gate structure. Secondly, fabricating using a Wide-band-gap material (WBG) enhances device performance greatly.
published_date 2022-12-02T04:21:33Z
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score 11.036684

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