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Suppressing Interfacial Recombination with a Strong‐Interaction Surface Modulator for Efficient Inverted Perovskite Solar Cells
Advanced Energy Materials, Volume: 12, Issue: 48, Start page: 2202868
Swansea University Authors: James McGettrick , Trystan Watson
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DOI (Published version): 10.1002/aenm.202202868
Abstract
Successful manipulation of halide perovskite surfaces is typically achieved via the interactions between modulators and perovskites. Herein, it is demonstrated that a strong-interaction surface modulator is beneficial to reduce interfacial recombination losses in inverted (p-i-n) perovskite solar ce...
Published in: | Advanced Energy Materials |
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ISSN: | 1614-6832 1614-6840 |
Published: |
Wiley
2022
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa61965 |
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Abstract: |
Successful manipulation of halide perovskite surfaces is typically achieved via the interactions between modulators and perovskites. Herein, it is demonstrated that a strong-interaction surface modulator is beneficial to reduce interfacial recombination losses in inverted (p-i-n) perovskite solar cells (IPSCs). Two organic ammonium salts are investigated, consisting of 4-hydroxyphenethylammonium iodide and 2-thiopheneethylammonium iodide (2-TEAI). Without thermal annealing, these two modulators can recover the photoluminescence quantum yield of the neat perovskite film in contact with fullerene electron transport layer (ETL). Compared to the hydroxyl-functionalized phenethylammonium moiety, the thienylammonium facilitates the formation of a quasi-2D structure onto the perovskite. Density functional theory and quasi-Fermi level splitting calculations reveal that the 2-TEAI has a stronger interaction with the perovskite surface, contributing to more suppressed non-radiative recombination at the perovskite/ETL interface and improved open-circuit voltage (VOC) of the fabricated IPSCs. As a result, the VOC increases from 1.11 to 1.20 V (based on a perovskite bandgap of 1.63 eV), yielding a power conversion efficiency (PCE) from ≈20% to 21.9% (stabilized PCE of 21.3%, the highest reported PCEs for IPSCs employing poly[N,N′′-bis(4-butylphenyl)-N,N′′-bis(phenyl)benzidine] as the hole transport layer, alongside the enhanced operational and shelf-life stability for unencapsulated devices. |
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Keywords: |
inverted perovskite solar cells; molecular design, ligands; non-radiative recombination; surface manipulation |
College: |
Faculty of Science and Engineering |
Funders: |
EPSRC. Grant Number: EP/V027131/1
Newton Advanced Fellowship. Grant Number: 192097
China Scholarship Council. Grant Numbers: 201706020158, 760949
Equal Opportunities Foundation Hong Kong
Fujian Key Laboratory of Photoelectric Functional Materials. Grant Number: FJPFM-201902
University of Surrey
DCSA3 scholarship
EPSRC SPECIFIC IKC. Grant Number: EP/N020863/1
UK EPSRC. Grant Number: EP/S009213/1
Royal Society
Engineering and Physical Sciences Research Council. Grant Numbers: EP/R023980/1, EP/V027131/1
European Research Council
European Union's Horizon 2020. Grant Number: 756962
Royal Society
Tata Group. Grant Number: UF150033
State Key Laboratory of Advanced Materials and Electronic Components, Guangdong Fenghua Advanced Technology Holding. Grant Number: 201901
Key Technologies Research and Development Program. Grant Number: 2019YFB1503500
European Commission H2020 CORNET program. Grant Number: 760949
Chinese Government Scholarship. Grant Number: 201808370197 |
Issue: |
48 |
Start Page: |
2202868 |