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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs

Karol Kalna Orcid Logo

Microelectronic Engineering

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1016/j.mee.2009.03.024

Published in: Microelectronic Engineering
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa6063
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first_indexed 2013-07-23T11:56:05Z
last_indexed 2018-02-09T04:33:12Z
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spelling 2015-05-31T18:04:40.8342395 v2 6063 2013-09-03 Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article Microelectronic Engineering 31 12 2009 2009-12-31 10.1016/j.mee.2009.03.024 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-31T18:04:40.8342395 2013-09-03T06:36:11.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Karol Kalna 0000-0002-6333-9189 1
title Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
spellingShingle Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
Karol Kalna
title_short Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_full Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_fullStr Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_full_unstemmed Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_sort Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Karol Kalna
format Journal article
container_title Microelectronic Engineering
publishDate 2009
institution Swansea University
doi_str_mv 10.1016/j.mee.2009.03.024
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:07:26Z
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score 11.013731

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