Journal article 1084 views
Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
Natalia Seoane,
Manuel Aldegunde,
Antonio Jesus García-Loureiro,
Raul Valin,
Karol Kalna 
Journal of Computational Electronics
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1007/s10825-008-0233-3
Abstract
Random dopant related variability in the 30 nm gate length In<sub>0.75</sub>Ga<sub>0.25</sub>As implant free MOSFET
| Published in: | Journal of Computational Electronics |
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| Published: |
2008
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa6060 |
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| College: |
Faculty of Science and Engineering |
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