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Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current

Liyuan Song, Libin Tang, Qun Hao, Chunli Yang, Vincent Teng Orcid Logo, Haipeng Wang, Biao Yue, Junbin Li, Hong Wei

Optics Express, Volume: 30, Issue: 9, Start page: 14828

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1364/oe.454587

Abstract

Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe...

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Published in: Optics Express
ISSN: 1094-4087
Published: Optica Publishing Group 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa59748
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spelling 2022-05-17T12:01:31.9665704 v2 59748 2022-03-31 Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2022-03-31 EEEG Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe), has been widely studied as a thermoelectric material. Furthermore, because of its narrow bandgap, it can be used as a novel infrared photodetector material. In this study, a large-area SnTe nanofilm with controllable thickness was deposited onto a quartz substrate using magnetron sputtering and was used to fabricate a photodetector. The device exhibited a photoelectric response over a broad spectral range of 400-1050 nm. In the near-infrared band of 940 nm, the detectivity (D*) and responsivity (R) of the photodetector were 3.46×1011 cmHz1/2w-1 and 1.71 A/W, respectively, at an optical power density of 0.2 mWcm-2. As the thickness of the SnTe nanofilm increased, a transition from semiconducting to metallic properties was experimentally observed for the first time. The large-area (2.5cm × 2.5cm) high-performance nanofilms show important potential for application in infrared focal plane array (FPA) detectors. Journal Article Optics Express 30 9 14828 Optica Publishing Group 1094-4087 20 4 2022 2022-04-20 10.1364/oe.454587 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University National Key Research and Development Program of China (2019YFB2203404); National Natural Science Foundation of China (11864044). 2022-05-17T12:01:31.9665704 2022-03-31T12:26:28.8033662 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Liyuan Song 1 Libin Tang 2 Qun Hao 3 Chunli Yang 4 Vincent Teng 0000-0003-4325-8573 5 Haipeng Wang 6 Biao Yue 7 Junbin Li 8 Hong Wei 9 59748__24105__58c18e3e3b8b430b85fbc59227c4d242.pdf 59748.pdf 2022-05-17T11:58:28.2591072 Output 4099487 application/pdf Version of Record true © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for noncommercial purposes and appropriate attribution is maintained. All other rights are reserved. true eng https://opg.optica.org/library/license_v2.cfm#VOR-OA
title Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
spellingShingle Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
Vincent Teng
title_short Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
title_full Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
title_fullStr Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
title_full_unstemmed Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
title_sort Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Liyuan Song
Libin Tang
Qun Hao
Chunli Yang
Vincent Teng
Haipeng Wang
Biao Yue
Junbin Li
Hong Wei
format Journal article
container_title Optics Express
container_volume 30
container_issue 9
container_start_page 14828
publishDate 2022
institution Swansea University
issn 1094-4087
doi_str_mv 10.1364/oe.454587
publisher Optica Publishing Group
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe), has been widely studied as a thermoelectric material. Furthermore, because of its narrow bandgap, it can be used as a novel infrared photodetector material. In this study, a large-area SnTe nanofilm with controllable thickness was deposited onto a quartz substrate using magnetron sputtering and was used to fabricate a photodetector. The device exhibited a photoelectric response over a broad spectral range of 400-1050 nm. In the near-infrared band of 940 nm, the detectivity (D*) and responsivity (R) of the photodetector were 3.46×1011 cmHz1/2w-1 and 1.71 A/W, respectively, at an optical power density of 0.2 mWcm-2. As the thickness of the SnTe nanofilm increased, a transition from semiconducting to metallic properties was experimentally observed for the first time. The large-area (2.5cm × 2.5cm) high-performance nanofilms show important potential for application in infrared focal plane array (FPA) detectors.
published_date 2022-04-20T04:17:17Z
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score 11.037056

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