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Preparation of Si quantum dots by phase transition with controlled annealing

Liyuan Fang, Libin Tang, Vincent Teng Orcid Logo, Jinzhong Xiang

Nanotechnology, Volume: 32, Issue: 41, Start page: 415205

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1088/1361-6528/ac1196

Abstract

Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to pre...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: IOP Publishing 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa57285
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first_indexed 2021-07-08T11:02:35Z
last_indexed 2023-01-11T14:37:06Z
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spelling 2022-07-13T13:33:04.9827074 v2 57285 2021-07-08 Preparation of Si quantum dots by phase transition with controlled annealing 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2021-07-08 EEEG Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to prepare the nanomaterials in addition to yielding excellent performances. In this article, we developed a novel preparation method of producing Si-QDs film based on carbon-silicon composite. The film was synthesized by co-sputtering using magnetron sputtering technique and studied at different annealing temperatures. Upon annealing, the film was transformed from an amorphous state to a crystalline state leading to Si-QDs precipitation, which can be observed at a low temperature of 600 °C. A Si-QDs thin film/n-Si photodetector was then prepared and characterized. The device exhibited a high specific detection rate (D*) of 1.246×1012 cmHz1/2W-1 under 940 nm (1.1 mWcm-2) infrared radiation at 5 V bias. It also demonstrated good responsiveness and stability. Journal Article Nanotechnology 32 41 415205 IOP Publishing 0957-4484 1361-6528 8 10 2021 2021-10-08 10.1088/1361-6528/ac1196 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University This work was supported by National Natural Science Foundation of China (Grant Nos. 61106098 and 51462037) and Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices, China. 2022-07-13T13:33:04.9827074 2021-07-08T11:59:03.7116744 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Liyuan Fang 1 Libin Tang 2 Vincent Teng 0000-0003-4325-8573 3 Jinzhong Xiang 4 57285__20363__352c1207cfc440c787d6c8c551c99a6e.pdf 57285.pdf 2021-07-08T12:01:40.9888272 Output 926102 application/pdf Accepted Manuscript true 2022-07-23T00:00:00.0000000 Released under the terms of a CC BY-NC-ND 3.0 licence true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Preparation of Si quantum dots by phase transition with controlled annealing
spellingShingle Preparation of Si quantum dots by phase transition with controlled annealing
Vincent Teng
title_short Preparation of Si quantum dots by phase transition with controlled annealing
title_full Preparation of Si quantum dots by phase transition with controlled annealing
title_fullStr Preparation of Si quantum dots by phase transition with controlled annealing
title_full_unstemmed Preparation of Si quantum dots by phase transition with controlled annealing
title_sort Preparation of Si quantum dots by phase transition with controlled annealing
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Liyuan Fang
Libin Tang
Vincent Teng
Jinzhong Xiang
format Journal article
container_title Nanotechnology
container_volume 32
container_issue 41
container_start_page 415205
publishDate 2021
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/1361-6528/ac1196
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to prepare the nanomaterials in addition to yielding excellent performances. In this article, we developed a novel preparation method of producing Si-QDs film based on carbon-silicon composite. The film was synthesized by co-sputtering using magnetron sputtering technique and studied at different annealing temperatures. Upon annealing, the film was transformed from an amorphous state to a crystalline state leading to Si-QDs precipitation, which can be observed at a low temperature of 600 °C. A Si-QDs thin film/n-Si photodetector was then prepared and characterized. The device exhibited a high specific detection rate (D*) of 1.246×1012 cmHz1/2W-1 under 940 nm (1.1 mWcm-2) infrared radiation at 5 V bias. It also demonstrated good responsiveness and stability.
published_date 2021-10-08T04:12:54Z
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score 11.013619

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