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In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application

Rujie Li, Libin Tang, Qing Zhao, Thuc Hue Ly, Kar Seng Teng, Yao Li, Yanbo Hu, Chang Shu, Shu Ping Lau, Vincent Teng Orcid Logo

Nanoscale Research Letters, Volume: 14, Issue: 1

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1186/s11671-019-2992-0

Abstract

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature cond...

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Published in: Nanoscale Research Letters
ISSN: 1931-7573 1556-276X
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa50385
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Abstract: Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In2S3 QDs with excellent crystal quality. The properties of the as-prepared In2S3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 1013 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.
Keywords: In2S3 QDs, Preparation, Properties, Optoelectronic application
College: Faculty of Science and Engineering
Issue: 1

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