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Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well

Mandun Fu, Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 88, Start page: 106310

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2021.106310

Abstract

Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit inter...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa57257
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first_indexed 2021-07-01T19:23:38Z
last_indexed 2021-08-05T03:16:54Z
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spelling 2021-08-04T15:03:48.5137480 v2 57257 2021-07-01 Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2021-07-01 EEEG Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit interaction (RSOI) provides an available method for the manipulation of spin by controlling electronic movement within external potential field. In this study, we demonstrate the RSOI of conduction electron modulated by stress-induced polarization field in ZnO/CdO quantum well (QW). The polarization field exactly triggers band inversion between the electron and light hole. The peak of RSOI coefficient can reach approximately up to 83 meVnm, almost three orders of magnitude higher than the conventional GaAs-based QWs. This study can be beneficial to sufficient manipulation of spin qubits by strong RSOI quantum piezotornic effect induced, and will stimulate an intense researching interest in low-dimensional quantum piezotronic devices. Journal Article Nano Energy 88 106310 Elsevier BV 2211-2855 Quantum piezotronics, Rashba spin-orbit interaction, stress-induced polarization field, ZnO/CdO quantum well 1 10 2021 2021-10-01 10.1016/j.nanoen.2021.106310 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-08-04T15:03:48.5137480 2021-07-01T20:20:03.6938197 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Mandun Fu 1 Minjiang Dan 2 Gongwei Hu 3 Lijie Li 0000-0003-4630-7692 4 Yan Zhang 5 57257__20319__9655f6b6f59148b4be8ee8c6e3865696.pdf 1-s2.0-S2211285521005656-main.pdf 2021-07-01T20:22:48.7348132 Output 2087461 application/pdf Accepted Manuscript true 2022-07-01T00:00:00.0000000 Released under the terms of a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) License true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
spellingShingle Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
Lijie Li
title_short Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
title_full Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
title_fullStr Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
title_full_unstemmed Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
title_sort Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Mandun Fu
Minjiang Dan
Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 88
container_start_page 106310
publishDate 2021
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2021.106310
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit interaction (RSOI) provides an available method for the manipulation of spin by controlling electronic movement within external potential field. In this study, we demonstrate the RSOI of conduction electron modulated by stress-induced polarization field in ZnO/CdO quantum well (QW). The polarization field exactly triggers band inversion between the electron and light hole. The peak of RSOI coefficient can reach approximately up to 83 meVnm, almost three orders of magnitude higher than the conventional GaAs-based QWs. This study can be beneficial to sufficient manipulation of spin qubits by strong RSOI quantum piezotornic effect induced, and will stimulate an intense researching interest in low-dimensional quantum piezotronic devices.
published_date 2021-10-01T04:12:51Z
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score 11.037581

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