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Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well

Mandun Fu, Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 88, Start page: 106310

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2021.106310

Abstract

Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit inter...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57257
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Abstract: Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit interaction (RSOI) provides an available method for the manipulation of spin by controlling electronic movement within external potential field. In this study, we demonstrate the RSOI of conduction electron modulated by stress-induced polarization field in ZnO/CdO quantum well (QW). The polarization field exactly triggers band inversion between the electron and light hole. The peak of RSOI coefficient can reach approximately up to 83 meVnm, almost three orders of magnitude higher than the conventional GaAs-based QWs. This study can be beneficial to sufficient manipulation of spin qubits by strong RSOI quantum piezotornic effect induced, and will stimulate an intense researching interest in low-dimensional quantum piezotronic devices.
Keywords: Quantum piezotronics, Rashba spin-orbit interaction, stress-induced polarization field, ZnO/CdO quantum well
College: Faculty of Science and Engineering
Start Page: 106310

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