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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Minjiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li Orcid Logo, Yan Zhang

Small, Volume: 17, Issue: 13, Start page: 2008106

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1002/smll.202008106

Abstract

III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on nea...

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Published in: Small
ISSN: 1613-6810 1613-6829
Published: Wiley 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa56394
first_indexed 2021-03-10T21:25:36Z
last_indexed 2025-01-15T20:00:22Z
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spelling 2025-01-15T15:44:35.4187554 v2 56394 2021-03-10 High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2021-03-10 ACEM III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition. Journal Article Small 17 13 2008106 Wiley 1613-6810 1613-6829 GaN/AlN quantum well; intersubband transition; near‐infrared absorption; piezo‐phototronic effect 1 4 2021 2021-04-01 10.1002/smll.202008106 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Not Required The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2015KYQD063), and Engineering and Physical Sciences Research Council (grant no. EP/T019085/1). 2025-01-15T15:44:35.4187554 2021-03-10T21:23:45.5397346 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Minjiang Dan 1 Gongwei Hu 2 Jiaheng Nie 3 Lijie Li 0000-0003-4630-7692 4 Yan Zhang 5 56394__19552__04b2f2118d614a8580f02f28030d7c19.pdf accepted_Smll.pdf 2021-03-24T20:54:17.2120942 Output 756234 application/pdf Accepted Manuscript true 2022-03-10T00:00:00.0000000 true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
spellingShingle High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
Lijie Li
title_short High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
title_full High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
title_fullStr High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
title_full_unstemmed High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
title_sort High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Minjiang Dan
Gongwei Hu
Jiaheng Nie
Lijie Li
Yan Zhang
format Journal article
container_title Small
container_volume 17
container_issue 13
container_start_page 2008106
publishDate 2021
institution Swansea University
issn 1613-6810
1613-6829
doi_str_mv 10.1002/smll.202008106
publisher Wiley
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.
published_date 2021-04-01T08:00:14Z
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score 11.04748

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