No Cover Image

Journal article 614 views 271 downloads

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Minjiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li Orcid Logo, Yan Zhang

Small, Volume: 17, Issue: 13, Start page: 2008106

Swansea University Author: Lijie Li Orcid Logo

Check full text

DOI (Published version): 10.1002/smll.202008106

Abstract

III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on nea...

Full description

Published in: Small
ISSN: 1613-6810 1613-6829
Published: Wiley 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa56394
Abstract: III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.
Keywords: GaN/AlN quantum well; intersubband transition; near‐infrared absorption; piezo‐phototronic effect
College: Faculty of Science and Engineering
Funders: The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2015KYQD063), and Engineering and Physical Sciences Research Council (grant no. EP/T019085/1).
Issue: 13
Start Page: 2008106

Similar Items