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Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping

Shuo Deng, Ran Xu, Min Li, Lijie Li Orcid Logo, Zhong Lin Wang, Qing Zhang

Nano Energy, Volume: 78, Start page: 105287

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2020.105287

Abstract

It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion (Zhang et al., 2018) [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa54986
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first_indexed 2020-08-15T18:10:27Z
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spelling 2020-09-17T14:04:29.3581417 v2 54986 2020-08-15 Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2020-08-15 EEEG It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion (Zhang et al., 2018) [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller than the space charge in the depletion regions of an ideal p-n (or Schottky) junction formed with the corresponding semiconductors (or metals). In this work, charge pumping between p-type and n-type silicon is investigated using the first principles calculation with non-equilibrium Green function. We find that a large density of states is formed during silicon surface relaxation and they are further changed during hydrogenated process. The surface charges result in a surface potential barrier, which has a negative impact on electron and hole transfer between the contacted silicon surfaces. In addition, it is also found that the total charges in the depletion regions depend very sensitively on the air gap between the two silicon electrodes. More than 68% of the charges can be pumped out with a gap ofÅ. These results suggest that intermittently contacted p-n junction could function as an efficient electric generator or mechanical sensor if the surface states and gap width are well controlled. Journal Article Nano Energy 78 105287 Elsevier BV 2211-2855 Electric generator; Electron pump; Non-ideal contact; p-n junction; Mechanical sensor; First principles calculation 1 12 2020 2020-12-01 10.1016/j.nanoen.2020.105287 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-09-17T14:04:29.3581417 2020-08-15T19:07:52.1392948 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Shuo Deng 1 Ran Xu 2 Min Li 3 Lijie Li 0000-0003-4630-7692 4 Zhong Lin Wang 5 Qing Zhang 6 54986__17923__7c0ee3eb787e4e418f7bacd6026a803e.pdf NanoEn_0820_accepted.pdf 2020-08-15T19:10:14.0059591 Output 2447324 application/pdf Accepted Manuscript true 2021-08-15T00:00:00.0000000 © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license true English http://creativecommons.org/licenses/by-nc-nd/4.0/
title Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
spellingShingle Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
Lijie Li
title_short Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
title_full Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
title_fullStr Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
title_full_unstemmed Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
title_sort Influences of surface charges and gap width between p-type and n-type semiconductors on charge pumping
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Shuo Deng
Ran Xu
Min Li
Lijie Li
Zhong Lin Wang
Qing Zhang
format Journal article
container_title Nano Energy
container_volume 78
container_start_page 105287
publishDate 2020
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2020.105287
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description It has been reported that charges can be pumped out of an intermittently contacted p-n (or Schottky) junction, accompanied with mechanical to electric power conversion (Zhang et al., 2018) [1]. The amount of charge measured in the circuit, however, was observed to be 3–4 orders of magnitudes smaller than the space charge in the depletion regions of an ideal p-n (or Schottky) junction formed with the corresponding semiconductors (or metals). In this work, charge pumping between p-type and n-type silicon is investigated using the first principles calculation with non-equilibrium Green function. We find that a large density of states is formed during silicon surface relaxation and they are further changed during hydrogenated process. The surface charges result in a surface potential barrier, which has a negative impact on electron and hole transfer between the contacted silicon surfaces. In addition, it is also found that the total charges in the depletion regions depend very sensitively on the air gap between the two silicon electrodes. More than 68% of the charges can be pumped out with a gap ofÅ. These results suggest that intermittently contacted p-n junction could function as an efficient electric generator or mechanical sensor if the surface states and gap width are well controlled.
published_date 2020-12-01T04:08:53Z
_version_ 1763753625954287616
score 11.013686

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