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A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Satyaprasad P. Senanayak, Mojtaba Abdi-Jalebi, Varun S. Kamboj, Remington Carey, Ravichandran Shivanna, Tian Tian, Guillaume Schweicher, Junzhan Wang, Nadja Giesbrecht, Daniele Di Nuzzo, Harvey E. Beere, Pablo Docampo, David Ritchie Orcid Logo, David Fairen-Jimenez, Richard H. Friend, Henning Sirringhaus

Science Advances, Volume: 6, Issue: 15, Start page: eaaz4948

Swansea University Author: David Ritchie Orcid Logo

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DOI (Published version): 10.1126/sciadv.aaz4948

Published in: Science Advances
ISSN: 2375-2548
Published: American Association for the Advancement of Science (AAAS) 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa54113
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first_indexed 2020-05-01T19:38:43Z
last_indexed 2020-06-04T19:09:28Z
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spelling 2020-06-04T18:33:15.3535706 v2 54113 2020-05-01 A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors e943ea127ff7b7771c2b27c15b96c6fa 0000-0002-9844-8350 David Ritchie David Ritchie true false 2020-05-01 SPH Journal Article Science Advances 6 15 eaaz4948 American Association for the Advancement of Science (AAAS) 2375-2548 10 4 2020 2020-04-10 10.1126/sciadv.aaz4948 COLLEGE NANME Physics COLLEGE CODE SPH Swansea University 2020-06-04T18:33:15.3535706 2020-05-01T15:35:57.3118372 Satyaprasad P. Senanayak 1 Mojtaba Abdi-Jalebi 2 Varun S. Kamboj 3 Remington Carey 4 Ravichandran Shivanna 5 Tian Tian 6 Guillaume Schweicher 7 Junzhan Wang 8 Nadja Giesbrecht 9 Daniele Di Nuzzo 10 Harvey E. Beere 11 Pablo Docampo 12 David Ritchie 0000-0002-9844-8350 13 David Fairen-Jimenez 14 Richard H. Friend 15 Henning Sirringhaus 16 54113__17174__f4099e840c584d0fa023b7f56a06520e.pdf 54113.pdf 2020-05-01T15:39:23.1166634 Output 747111 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution NonCommercial License 4.0 (CC-BY-NC). true eng http://creativecommons.org/licenses/by-nc/4.0/
title A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
spellingShingle A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
David Ritchie
title_short A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
title_full A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
title_fullStr A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
title_full_unstemmed A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
title_sort A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
author_id_str_mv e943ea127ff7b7771c2b27c15b96c6fa
author_id_fullname_str_mv e943ea127ff7b7771c2b27c15b96c6fa_***_David Ritchie
author David Ritchie
author2 Satyaprasad P. Senanayak
Mojtaba Abdi-Jalebi
Varun S. Kamboj
Remington Carey
Ravichandran Shivanna
Tian Tian
Guillaume Schweicher
Junzhan Wang
Nadja Giesbrecht
Daniele Di Nuzzo
Harvey E. Beere
Pablo Docampo
David Ritchie
David Fairen-Jimenez
Richard H. Friend
Henning Sirringhaus
format Journal article
container_title Science Advances
container_volume 6
container_issue 15
container_start_page eaaz4948
publishDate 2020
institution Swansea University
issn 2375-2548
doi_str_mv 10.1126/sciadv.aaz4948
publisher American Association for the Advancement of Science (AAAS)
document_store_str 1
active_str 0
published_date 2020-04-10T04:07:27Z
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score 11.013731

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