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A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
Satyaprasad P. Senanayak,
Mojtaba Abdi-Jalebi,
Varun S. Kamboj,
Remington Carey,
Ravichandran Shivanna,
Tian Tian,
Guillaume Schweicher,
Junzhan Wang,
Nadja Giesbrecht,
Daniele Di Nuzzo,
Harvey E. Beere,
Pablo Docampo,
David Ritchie 
,
David Fairen-Jimenez,
Richard H. Friend,
Henning Sirringhaus
,
David Fairen-Jimenez,
Richard H. Friend,
Henning Sirringhaus
Science Advances, Volume: 6, Issue: 15, Start page: eaaz4948
Swansea University Author:
David Ritchie
-
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DOI (Published version): 10.1126/sciadv.aaz4948
Abstract
A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
| Published in: | Science Advances |
|---|---|
| ISSN: | 2375-2548 |
| Published: |
American Association for the Advancement of Science (AAAS)
2020
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa54113 |
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| Issue: |
15 |
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| Start Page: |
eaaz4948 |