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Piezotronic spin and valley transistors based on monolayer MoS2

Ruhao Liu, Gongwei Hu, Minjiang Dan, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 72, Start page: 104678

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2020.104678

Abstract

Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transpor...

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Published in: Nano Energy
ISSN: 2211-2855 2211-3282
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53793
first_indexed 2020-03-10T04:29:17Z
last_indexed 2025-03-05T05:03:59Z
id cronfa53793
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spelling 2025-03-04T10:50:23.8624791 v2 53793 2020-03-09 Piezotronic spin and valley transistors based on monolayer MoS2 ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2020-03-09 ACEM Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices. Journal Article Nano Energy 72 104678 Elsevier BV 2211-2855 2211-3282 Piezotronics; Quantum transport; Monolayer MoS2 1 6 2020 2020-06-01 10.1016/j.nanoen.2020.104678 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Not Required The authors are thankful for the support from University of Electronic Science and Technology of China (ZYGX2015KYQD063), Swansea University, SPARC II project. 2025-03-04T10:50:23.8624791 2020-03-09T18:06:32.7555488 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ruhao Liu 1 Gongwei Hu 2 Minjiang Dan 3 Yaming Zhang 4 Lijie Li 0000-0003-4630-7692 5 Yan Zhang 6 53793__16844__e4e862de17624d639f9207640429effc.pdf liu2020(2).pdf 2020-03-12T14:16:37.6677631 Output 5066332 application/pdf Accepted Manuscript true 2021-03-09T00:00:00.0000000 Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND). true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Piezotronic spin and valley transistors based on monolayer MoS2
spellingShingle Piezotronic spin and valley transistors based on monolayer MoS2
Lijie Li
title_short Piezotronic spin and valley transistors based on monolayer MoS2
title_full Piezotronic spin and valley transistors based on monolayer MoS2
title_fullStr Piezotronic spin and valley transistors based on monolayer MoS2
title_full_unstemmed Piezotronic spin and valley transistors based on monolayer MoS2
title_sort Piezotronic spin and valley transistors based on monolayer MoS2
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Ruhao Liu
Gongwei Hu
Minjiang Dan
Yaming Zhang
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 72
container_start_page 104678
publishDate 2020
institution Swansea University
issn 2211-2855
2211-3282
doi_str_mv 10.1016/j.nanoen.2020.104678
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices.
published_date 2020-06-01T11:00:37Z
_version_ 1831908448627851264
score 11.059359

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