Journal article 783 views 344 downloads
Piezotronic spin and valley transistors based on monolayer MoS2
,
Yan Zhang
Nano Energy, Volume: 72, Start page: 104678
Swansea University Author:
Lijie Li
-
PDF | Accepted Manuscript
Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND).
Download (4.83MB)
DOI (Published version): 10.1016/j.nanoen.2020.104678
Abstract
Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transpor...
| Published in: | Nano Energy |
|---|---|
| ISSN: | 2211-2855 |
| Published: |
Elsevier BV
2020
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa53793 |
| Abstract: |
Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS2. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices. |
|---|---|
| Keywords: |
piezotronics, quantum transport, monolayer MoS2 |
| Start Page: |
104678 |