No Cover Image

Journal article 694 views 313 downloads

Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao, Libin Tang, Shengyi Yang, Vincent Teng Orcid Logo, Shu Ping Lau

Optics Letters, Volume: 45, Issue: 5, Start page: 1108

Swansea University Author: Vincent Teng Orcid Logo

Check full text

DOI (Published version): 10.1364/ol.385280

Abstract

GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputteri...

Full description

Published in: Optics Letters
ISSN: 0146-9592 1539-4794
Published: The Optical Society 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa53363
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2020-01-27T13:30:32Z
last_indexed 2020-09-17T03:16:34Z
id cronfa53363
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-01-27T10:16:03.1220900</datestamp><bib-version>v2</bib-version><id>53363</id><entry>2020-01-27</entry><title>Infrared photodetector based on GeTe nanofilms with high performance</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-01-27</date><deptcode>EEEG</deptcode><abstract>GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of &#x223C;1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.</abstract><type>Journal Article</type><journal>Optics Letters</journal><volume>45</volume><journalNumber>5</journalNumber><paginationStart>1108</paginationStart><publisher>The Optical Society</publisher><issnPrint>0146-9592</issnPrint><issnElectronic>1539-4794</issnElectronic><keywords/><publishedDay>1</publishedDay><publishedMonth>3</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-03-01</publishedDate><doi>10.1364/ol.385280</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-01-27T10:16:03.1220900</lastEdited><Created>2020-01-27T10:16:03.1220900</Created><authors><author><firstname>Yiqun</firstname><surname>Zhao</surname><order>1</order></author><author><firstname>Libin</firstname><surname>Tang</surname><order>2</order></author><author><firstname>Shengyi</firstname><surname>Yang</surname><order>3</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>4</order></author><author><firstname>Shu Ping</firstname><surname>Lau</surname><order>5</order></author></authors><documents><document><filename>53363__16442__5606168d843f45e79d480328def8739e.pdf</filename><originalFilename>zhao2020.pdf</originalFilename><uploaded>2020-01-27T10:17:27.6554114</uploaded><type>Output</type><contentLength>1251004</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2021-02-19T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2020-01-27T10:16:03.1220900 v2 53363 2020-01-27 Infrared photodetector based on GeTe nanofilms with high performance 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-01-27 EEEG GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work. Journal Article Optics Letters 45 5 1108 The Optical Society 0146-9592 1539-4794 1 3 2020 2020-03-01 10.1364/ol.385280 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-01-27T10:16:03.1220900 2020-01-27T10:16:03.1220900 Yiqun Zhao 1 Libin Tang 2 Shengyi Yang 3 Vincent Teng 0000-0003-4325-8573 4 Shu Ping Lau 5 53363__16442__5606168d843f45e79d480328def8739e.pdf zhao2020.pdf 2020-01-27T10:17:27.6554114 Output 1251004 application/pdf Accepted Manuscript true 2021-02-19T00:00:00.0000000 true eng
title Infrared photodetector based on GeTe nanofilms with high performance
spellingShingle Infrared photodetector based on GeTe nanofilms with high performance
Vincent Teng
title_short Infrared photodetector based on GeTe nanofilms with high performance
title_full Infrared photodetector based on GeTe nanofilms with high performance
title_fullStr Infrared photodetector based on GeTe nanofilms with high performance
title_full_unstemmed Infrared photodetector based on GeTe nanofilms with high performance
title_sort Infrared photodetector based on GeTe nanofilms with high performance
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Yiqun Zhao
Libin Tang
Shengyi Yang
Vincent Teng
Shu Ping Lau
format Journal article
container_title Optics Letters
container_volume 45
container_issue 5
container_start_page 1108
publishDate 2020
institution Swansea University
issn 0146-9592
1539-4794
doi_str_mv 10.1364/ol.385280
publisher The Optical Society
document_store_str 1
active_str 0
description GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing. High-performance photodetectors with detectivity of ∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.
published_date 2020-03-01T04:06:16Z
_version_ 1763753461268086784
score 11.017016

Similar Items