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Two-dimensional electron gas in piezotronic devices

Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 59, Pages: 667 - 673

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2019.03.001

Abstract

Recent developments of piezotronic devices start to focus on the quantum behaviors of the nanostructured system going beyond the conventional device applications. Piezotronic devices utilize piezoelectric field to control the charge carrier behaviors at the junction, contact or interface of piezoele...

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Published in: Nano Energy
ISSN: 2211-2855
Published: 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49153
first_indexed 2019-03-09T13:55:57Z
last_indexed 2021-01-16T04:09:00Z
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spelling 2021-01-15T10:38:31.5529791 v2 49153 2019-03-09 Two-dimensional electron gas in piezotronic devices ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2019-03-09 ACEM Recent developments of piezotronic devices start to focus on the quantum behaviors of the nanostructured system going beyond the conventional device applications. Piezotronic devices utilize piezoelectric field to control the charge carrier behaviors at the junction, contact or interface of piezoelectric semiconductor, such as ZnO, GaN, and two-dimensional materials. In this study, we theoretically investigate the piezoelectric field effect on two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure by employing an approximate triangular potential model. Basic electronic properties such as wave function, electronic energy, electronic density distribution and the width of potential well are explored under the influence of the externally applied strain. From the electronic density, bound state can be eliminated or created by properly changing the external strain, meaning the effective modulation of piezotronic effect on quantum states. The piezoelectric field in 2DEG system is perpendicular to the electronic transport, which has remarkable advantage over the parallel case in switching devices. Furthermore, piezoelectric modulation of intrasubband transition enriches the fundamental theory of piezo-photonics and provides guidance for designing strain-gated infrared devices. Journal Article Nano Energy 59 667 673 2211-2855 Piezotronic effect; Two-dimensional electron gas; Intrasubband modulation 1 5 2019 2019-05-01 10.1016/j.nanoen.2019.03.001 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2021-01-15T10:38:31.5529791 2019-03-09T11:54:21.1255556 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Gongwei Hu 1 Lijie Li 0000-0003-4630-7692 2 Yan Zhang 3 0049153-09032019115506.pdf acceptedversionv6.pdf 2019-03-09T11:55:06.5700000 Output 1209284 application/pdf Accepted Manuscript true 2020-03-09T00:00:00.0000000 Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND). true eng
title Two-dimensional electron gas in piezotronic devices
spellingShingle Two-dimensional electron gas in piezotronic devices
Lijie Li
title_short Two-dimensional electron gas in piezotronic devices
title_full Two-dimensional electron gas in piezotronic devices
title_fullStr Two-dimensional electron gas in piezotronic devices
title_full_unstemmed Two-dimensional electron gas in piezotronic devices
title_sort Two-dimensional electron gas in piezotronic devices
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 59
container_start_page 667
publishDate 2019
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2019.03.001
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Recent developments of piezotronic devices start to focus on the quantum behaviors of the nanostructured system going beyond the conventional device applications. Piezotronic devices utilize piezoelectric field to control the charge carrier behaviors at the junction, contact or interface of piezoelectric semiconductor, such as ZnO, GaN, and two-dimensional materials. In this study, we theoretically investigate the piezoelectric field effect on two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure by employing an approximate triangular potential model. Basic electronic properties such as wave function, electronic energy, electronic density distribution and the width of potential well are explored under the influence of the externally applied strain. From the electronic density, bound state can be eliminated or created by properly changing the external strain, meaning the effective modulation of piezotronic effect on quantum states. The piezoelectric field in 2DEG system is perpendicular to the electronic transport, which has remarkable advantage over the parallel case in switching devices. Furthermore, piezoelectric modulation of intrasubband transition enriches the fundamental theory of piezo-photonics and provides guidance for designing strain-gated infrared devices.
published_date 2019-05-01T07:41:44Z
_version_ 1821390462794072064
score 11.04748

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