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Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping

G. Kartopu, O. Oklobia, D. Turkay, D.R. Diercks, B.P. Gorman, V. Barrioz, S. Campbell, J.D. Major, M.K. Al Turkestani, S. Yerci, T.M. Barnes, N.S. Beattie, G. Zoppi, S. Jones, S.J.C. Irvine, Giray Kartopu, Stuart Irvine Orcid Logo

Solar Energy Materials and Solar Cells, Volume: 194, Pages: 259 - 267

Swansea University Authors: Giray Kartopu, Stuart Irvine Orcid Logo

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DOI (Published version): 10.1016/j.solmat.2019.02.025

Abstract

Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, en...

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Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa49015
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-12-07T15:05:11.0254744</datestamp><bib-version>v2</bib-version><id>49015</id><entry>2019-02-28</entry><title>Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping</title><swanseaauthors><author><sid>5c4917e0a29801844ec31737672f930c</sid><firstname>Giray</firstname><surname>Kartopu</surname><name>Giray Kartopu</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>1ddb966eccef99aa96e87f1ea4917f1f</sid><ORCID>0000-0002-1652-4496</ORCID><firstname>Stuart</firstname><surname>Irvine</surname><name>Stuart Irvine</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2019-02-28</date><deptcode>MTLS</deptcode><abstract>Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3&#x202F;&#xD7;&#x202F;1016 cm&#x2212;3 were achieved at low growth temperature of 390&#x202F;&#xB0;C. No As segregation could be detected at grain boundaries, even for 1019 As&#x202F;cm&#x2212;3. A shallow acceptor level (+0.1&#x202F;eV) due to AsTe substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage.</abstract><type>Journal Article</type><journal>Solar Energy Materials and Solar Cells</journal><volume>194</volume><journalNumber/><paginationStart>259</paginationStart><paginationEnd>267</paginationEnd><publisher/><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0927-0248</issnPrint><issnElectronic/><keywords>CdTe, Group-V, Doping, Thin film, Photovoltaics, MOCVD</keywords><publishedDay>1</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2019</publishedYear><publishedDate>2019-06-01</publishedDate><doi>10.1016/j.solmat.2019.02.025</doi><url/><notes/><college>COLLEGE NANME</college><department>Materials Science and Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MTLS</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-12-07T15:05:11.0254744</lastEdited><Created>2019-02-28T09:16:11.4587870</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Materials Science and Engineering</level></path><authors><author><firstname>G.</firstname><surname>Kartopu</surname><order>1</order></author><author><firstname>O.</firstname><surname>Oklobia</surname><order>2</order></author><author><firstname>D.</firstname><surname>Turkay</surname><order>3</order></author><author><firstname>D.R.</firstname><surname>Diercks</surname><order>4</order></author><author><firstname>B.P.</firstname><surname>Gorman</surname><order>5</order></author><author><firstname>V.</firstname><surname>Barrioz</surname><order>6</order></author><author><firstname>S.</firstname><surname>Campbell</surname><order>7</order></author><author><firstname>J.D.</firstname><surname>Major</surname><order>8</order></author><author><firstname>M.K. Al</firstname><surname>Turkestani</surname><order>9</order></author><author><firstname>S.</firstname><surname>Yerci</surname><order>10</order></author><author><firstname>T.M.</firstname><surname>Barnes</surname><order>11</order></author><author><firstname>N.S.</firstname><surname>Beattie</surname><order>12</order></author><author><firstname>G.</firstname><surname>Zoppi</surname><order>13</order></author><author><firstname>S.</firstname><surname>Jones</surname><order>14</order></author><author><firstname>S.J.C.</firstname><surname>Irvine</surname><order>15</order></author><author><firstname>Giray</firstname><surname>Kartopu</surname><order>16</order></author><author><firstname>Stuart</firstname><surname>Irvine</surname><orcid>0000-0002-1652-4496</orcid><order>17</order></author></authors><documents><document><filename>0049015-02042019145210.pdf</filename><originalFilename>1-s2.0-S0927024819300911-main.pdf</originalFilename><uploaded>2019-04-02T14:52:10.5930000</uploaded><type>Output</type><contentLength>2153577</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2019-04-02T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2020-12-07T15:05:11.0254744 v2 49015 2019-02-28 Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2019-02-28 MTLS Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3 × 1016 cm−3 were achieved at low growth temperature of 390 °C. No As segregation could be detected at grain boundaries, even for 1019 As cm−3. A shallow acceptor level (+0.1 eV) due to AsTe substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage. Journal Article Solar Energy Materials and Solar Cells 194 259 267 0927-0248 CdTe, Group-V, Doping, Thin film, Photovoltaics, MOCVD 1 6 2019 2019-06-01 10.1016/j.solmat.2019.02.025 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2020-12-07T15:05:11.0254744 2019-02-28T09:16:11.4587870 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering G. Kartopu 1 O. Oklobia 2 D. Turkay 3 D.R. Diercks 4 B.P. Gorman 5 V. Barrioz 6 S. Campbell 7 J.D. Major 8 M.K. Al Turkestani 9 S. Yerci 10 T.M. Barnes 11 N.S. Beattie 12 G. Zoppi 13 S. Jones 14 S.J.C. Irvine 15 Giray Kartopu 16 Stuart Irvine 0000-0002-1652-4496 17 0049015-02042019145210.pdf 1-s2.0-S0927024819300911-main.pdf 2019-04-02T14:52:10.5930000 Output 2153577 application/pdf Version of Record true 2019-04-02T00:00:00.0000000 true eng
title Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
spellingShingle Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
Giray Kartopu
Stuart Irvine
title_short Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
title_full Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
title_fullStr Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
title_full_unstemmed Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
title_sort Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
author_id_str_mv 5c4917e0a29801844ec31737672f930c
1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv 5c4917e0a29801844ec31737672f930c_***_Giray Kartopu
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
author Giray Kartopu
Stuart Irvine
author2 G. Kartopu
O. Oklobia
D. Turkay
D.R. Diercks
B.P. Gorman
V. Barrioz
S. Campbell
J.D. Major
M.K. Al Turkestani
S. Yerci
T.M. Barnes
N.S. Beattie
G. Zoppi
S. Jones
S.J.C. Irvine
Giray Kartopu
Stuart Irvine
format Journal article
container_title Solar Energy Materials and Solar Cells
container_volume 194
container_start_page 259
publishDate 2019
institution Swansea University
issn 0927-0248
doi_str_mv 10.1016/j.solmat.2019.02.025
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
active_str 0
description Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3 × 1016 cm−3 were achieved at low growth temperature of 390 °C. No As segregation could be detected at grain boundaries, even for 1019 As cm−3. A shallow acceptor level (+0.1 eV) due to AsTe substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage.
published_date 2019-06-01T03:59:45Z
_version_ 1763753051583152128
score 11.014067

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