No Cover Image

Journal article 1310 views 625 downloads

Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO

Hongfei Li, Yuzheng Guo Orcid Logo, John Robertson

Physical Review Materials, Volume: 2, Issue: 7

Swansea University Author: Yuzheng Guo Orcid Logo

Check full text

DOI (Published version): 10.1103/PhysRevMaterials.2.074601

Abstract

Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphou...

Full description

Published in: Physical Review Materials
ISSN: 2475-9953
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa40917
first_indexed 2018-07-03T13:45:37Z
last_indexed 2018-09-10T18:54:25Z
id cronfa40917
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-09-10T15:37:52.3559173</datestamp><bib-version>v2</bib-version><id>40917</id><entry>2018-07-03</entry><title>Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO</title><swanseaauthors><author><sid>2c285ab01f88f7ecb25a3aacabee52ea</sid><ORCID>0000-0003-2656-0340</ORCID><firstname>Yuzheng</firstname><surname>Guo</surname><name>Yuzheng Guo</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2018-07-03</date><deptcode>ACEM</deptcode><abstract>Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520cm&#x2212;1, and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO).</abstract><type>Journal Article</type><journal>Physical Review Materials</journal><volume>2</volume><journalNumber>7</journalNumber><publisher/><issnElectronic>2475-9953</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-12-31</publishedDate><doi>10.1103/PhysRevMaterials.2.074601</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-09-10T15:37:52.3559173</lastEdited><Created>2018-07-03T12:51:15.6961478</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering</level></path><authors><author><firstname>Hongfei</firstname><surname>Li</surname><order>1</order></author><author><firstname>Yuzheng</firstname><surname>Guo</surname><orcid>0000-0003-2656-0340</orcid><order>2</order></author><author><firstname>John</firstname><surname>Robertson</surname><order>3</order></author></authors><documents><document><filename>0040917-03072018125127.pdf</filename><originalFilename>li2018v2.pdf</originalFilename><uploaded>2018-07-03T12:51:27.6470000</uploaded><type>Output</type><contentLength>1466905</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2018-07-25T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2018-09-10T15:37:52.3559173 v2 40917 2018-07-03 Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2018-07-03 ACEM Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520cm−1, and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO). Journal Article Physical Review Materials 2 7 2475-9953 31 12 2018 2018-12-31 10.1103/PhysRevMaterials.2.074601 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2018-09-10T15:37:52.3559173 2018-07-03T12:51:15.6961478 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Hongfei Li 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3 0040917-03072018125127.pdf li2018v2.pdf 2018-07-03T12:51:27.6470000 Output 1466905 application/pdf Accepted Manuscript true 2018-07-25T00:00:00.0000000 true eng
title Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
spellingShingle Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
Yuzheng Guo
title_short Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
title_full Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
title_fullStr Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
title_full_unstemmed Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
title_sort Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Hongfei Li
Yuzheng Guo
John Robertson
format Journal article
container_title Physical Review Materials
container_volume 2
container_issue 7
publishDate 2018
institution Swansea University
issn 2475-9953
doi_str_mv 10.1103/PhysRevMaterials.2.074601
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520cm−1, and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO).
published_date 2018-12-31T05:44:41Z
_version_ 1851280097441480704
score 11.090362

Similar Items