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High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator

Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 50, Pages: 544 - 551

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2018.06.007

Abstract

Piezotronics and piezo-phototronics have received increasing attention in flexible energy-harvesting devices, self-powered sensor systems utilizing piezoelectric semiconductor materials, such as ZnO, GaN and monolayer MoS2. Piezoelectric potentials induced by the externally applied strain can effect...

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Published in: Nano Energy
ISSN: 22112855
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa40643
first_indexed 2018-06-06T13:34:54Z
last_indexed 2018-09-03T18:53:18Z
id cronfa40643
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spelling 2018-09-03T15:37:27.0157236 v2 40643 2018-06-06 High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2018-06-06 ACEM Piezotronics and piezo-phototronics have received increasing attention in flexible energy-harvesting devices, self-powered sensor systems utilizing piezoelectric semiconductor materials, such as ZnO, GaN and monolayer MoS2. Piezoelectric potentials induced by the externally applied strain can effectively control the generation, recombination and transport of the charge carriers for achieving high-performance devices. In this study, we describe the piezotronics effect on the GaN/InN/GaN quantum well, which can induce performances resembling those of topological insulators by a piezoelectric field polarized under the externally applied mechanical strain. The transport properties of bulk and edge states of this quantum well device have been investigated by calculating the electron density distribution under different widths of the quantum point contact (QPC), which is the origin of more conductance plateaus. In addition, we postulate the mechanical-electronic logic operation mechanisms based on the piezotronics effect adjusting the transport of edge states in the quantum well device. Fundamental logic units such as NOT, NAND and NOR gates have been innovatively designed for performing the logic computation functions from external mechanical stimuli. The logic nanodevices based on the topological insulator have near zero-power consumption and ultrahigh ON/OFF ratio. This work provides a deep insight into the piezotronics effect on the transport of bulk and edge states of the quantum well device, and offers novel solutions to design high-performance low-power mechanical-electronic logic devices. Journal Article Nano Energy 50 544 551 22112855 Piezotronics; Topological insulator; Logic nanodevices 31 12 2018 2018-12-31 10.1016/j.nanoen.2018.06.007 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2018-09-03T15:37:27.0157236 2018-06-06T08:52:58.5103159 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Minjiang Dan 1 Gongwei Hu 2 Lijie Li 0000-0003-4630-7692 3 Yan Zhang 4 0040643-06062018085445.pdf dan2018.pdf 2018-06-06T08:54:45.3100000 Output 1760518 application/pdf Accepted Manuscript true 2019-06-05T00:00:00.0000000 true eng
title High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
spellingShingle High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
Lijie Li
title_short High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
title_full High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
title_fullStr High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
title_full_unstemmed High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
title_sort High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Minjiang Dan
Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 50
container_start_page 544
publishDate 2018
institution Swansea University
issn 22112855
doi_str_mv 10.1016/j.nanoen.2018.06.007
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Piezotronics and piezo-phototronics have received increasing attention in flexible energy-harvesting devices, self-powered sensor systems utilizing piezoelectric semiconductor materials, such as ZnO, GaN and monolayer MoS2. Piezoelectric potentials induced by the externally applied strain can effectively control the generation, recombination and transport of the charge carriers for achieving high-performance devices. In this study, we describe the piezotronics effect on the GaN/InN/GaN quantum well, which can induce performances resembling those of topological insulators by a piezoelectric field polarized under the externally applied mechanical strain. The transport properties of bulk and edge states of this quantum well device have been investigated by calculating the electron density distribution under different widths of the quantum point contact (QPC), which is the origin of more conductance plateaus. In addition, we postulate the mechanical-electronic logic operation mechanisms based on the piezotronics effect adjusting the transport of edge states in the quantum well device. Fundamental logic units such as NOT, NAND and NOR gates have been innovatively designed for performing the logic computation functions from external mechanical stimuli. The logic nanodevices based on the topological insulator have near zero-power consumption and ultrahigh ON/OFF ratio. This work provides a deep insight into the piezotronics effect on the transport of bulk and edge states of the quantum well device, and offers novel solutions to design high-performance low-power mechanical-electronic logic devices.
published_date 2018-12-31T19:26:01Z
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score 11.04748

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