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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Jun Hong Park, Atresh Sanne, Yuzheng Guo Orcid Logo, Matin Amani, Kehao Zhang, Hema C. P. Movva, Joshua A. Robinson, Ali Javey, John Robertson, Sanjay K. Banerjee, Andrew C. Kummel

Science Advances, Volume: 3, Issue: 10, Start page: e1701661

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1126/sciadv.1701661

Abstract

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

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Published in: Science Advances
ISSN: 2375-2548
Published: American Association for the Advancement of Science (AAAS) 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37808
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last_indexed 2021-09-25T02:56:09Z
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spelling 2021-09-24T14:57:10.4262028 v2 37808 2018-01-03 Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2018-01-03 ACEM Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex. Journal Article Science Advances 3 10 e1701661 American Association for the Advancement of Science (AAAS) 2375-2548 20 10 2017 2017-10-20 10.1126/sciadv.1701661 2019 This work has led to the author being invited to speak at MRS spring meeting. COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2021-09-24T14:57:10.4262028 2018-01-03T10:21:01.2881386 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Jun Hong Park 1 Atresh Sanne 2 Yuzheng Guo 0000-0003-2656-0340 3 Matin Amani 4 Kehao Zhang 5 Hema C. P. Movva 6 Joshua A. Robinson 7 Ali Javey 8 John Robertson 9 Sanjay K. Banerjee 10 Andrew C. Kummel 11 0037808-03012018102421.pdf park2017.pdf 2018-01-03T10:24:21.4870000 Output 3284963 application/pdf Version of Record true © 2017 The Authors. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution NonCommercial License 4.0 true eng http://creativecommons.org/licenses/by-nc/4.0/
title Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
spellingShingle Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
Yuzheng Guo
title_short Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
title_full Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
title_fullStr Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
title_full_unstemmed Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
title_sort Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Jun Hong Park
Atresh Sanne
Yuzheng Guo
Matin Amani
Kehao Zhang
Hema C. P. Movva
Joshua A. Robinson
Ali Javey
John Robertson
Sanjay K. Banerjee
Andrew C. Kummel
format Journal article
container_title Science Advances
container_volume 3
container_issue 10
container_start_page e1701661
publishDate 2017
institution Swansea University
issn 2375-2548
doi_str_mv 10.1126/sciadv.1701661
publisher American Association for the Advancement of Science (AAAS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.
published_date 2017-10-20T13:22:33Z
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score 11.132912

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