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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Jari Lindberg, Wulf Dettmer Orcid Logo, Djordje Peric Orcid Logo, Antonio J. Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 933 - 939

Swansea University Authors: Wulf Dettmer Orcid Logo, Djordje Peric Orcid Logo, Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2016.2519822

Abstract

Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the co...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2016
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa35988
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Abstract: Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation.
College: Faculty of Science and Engineering
Issue: 3
Start Page: 933
End Page: 939

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