No Cover Image

Journal article 1036 views 183 downloads

The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition

Brittany L. Oliva-Chatelain, Andrew Barron Orcid Logo

Main Group Chemistry, Volume: 15, Issue: 3, Pages: 275 - 286

Swansea University Author: Andrew Barron Orcid Logo

Check full text

DOI (Published version): 10.3233/MGC-160207

Abstract

Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous...

Full description

Published in: Main Group Chemistry
ISSN: 1745-1167
Published: 2016
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa30359
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2016-10-04T13:07:18Z
last_indexed 2018-02-09T05:16:13Z
id cronfa30359
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2017-08-03T13:38:29.5506279</datestamp><bib-version>v2</bib-version><id>30359</id><entry>2016-10-04</entry><title>The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition</title><swanseaauthors><author><sid>92e452f20936d688d36f91c78574241d</sid><ORCID>0000-0002-2018-8288</ORCID><firstname>Andrew</firstname><surname>Barron</surname><name>Andrew Barron</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-10-04</date><deptcode>CHEG</deptcode><abstract>Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of St&#xF6;ber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films.</abstract><type>Journal Article</type><journal>Main Group Chemistry</journal><volume>15</volume><journalNumber>3</journalNumber><paginationStart>275</paginationStart><paginationEnd>286</paginationEnd><publisher/><issnElectronic>1745-1167</issnElectronic><keywords/><publishedDay>15</publishedDay><publishedMonth>9</publishedMonth><publishedYear>2016</publishedYear><publishedDate>2016-09-15</publishedDate><doi>10.3233/MGC-160207</doi><url/><notes/><college>COLLEGE NANME</college><department>Chemical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>CHEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2017-08-03T13:38:29.5506279</lastEdited><Created>2016-10-04T09:34:45.8493972</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Chemical Engineering</level></path><authors><author><firstname>Brittany L.</firstname><surname>Oliva-Chatelain</surname><order>1</order></author><author><firstname>Andrew</firstname><surname>Barron</surname><orcid>0000-0002-2018-8288</orcid><order>2</order></author></authors><documents><document><filename>0030359-05102016094932.pdf</filename><originalFilename>oliva-chatelain2016.pdf</originalFilename><uploaded>2016-10-05T09:49:32.2600000</uploaded><type>Output</type><contentLength>1019880</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2016-10-05T00:00:00.0000000</embargoDate><copyrightCorrect>false</copyrightCorrect></document></documents><OutputDurs/></rfc1807>
spelling 2017-08-03T13:38:29.5506279 v2 30359 2016-10-04 The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition 92e452f20936d688d36f91c78574241d 0000-0002-2018-8288 Andrew Barron Andrew Barron true false 2016-10-04 CHEG Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films. Journal Article Main Group Chemistry 15 3 275 286 1745-1167 15 9 2016 2016-09-15 10.3233/MGC-160207 COLLEGE NANME Chemical Engineering COLLEGE CODE CHEG Swansea University 2017-08-03T13:38:29.5506279 2016-10-04T09:34:45.8493972 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemical Engineering Brittany L. Oliva-Chatelain 1 Andrew Barron 0000-0002-2018-8288 2 0030359-05102016094932.pdf oliva-chatelain2016.pdf 2016-10-05T09:49:32.2600000 Output 1019880 application/pdf Accepted Manuscript true 2016-10-05T00:00:00.0000000 false
title The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
spellingShingle The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
Andrew Barron
title_short The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_full The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_fullStr The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_full_unstemmed The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
title_sort The effect of concentration and post-deposition annealing on silica coated germanium quantum dot thin films grown by vertical deposition
author_id_str_mv 92e452f20936d688d36f91c78574241d
author_id_fullname_str_mv 92e452f20936d688d36f91c78574241d_***_Andrew Barron
author Andrew Barron
author2 Brittany L. Oliva-Chatelain
Andrew Barron
format Journal article
container_title Main Group Chemistry
container_volume 15
container_issue 3
container_start_page 275
publishDate 2016
institution Swansea University
issn 1745-1167
doi_str_mv 10.3233/MGC-160207
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemical Engineering
document_store_str 1
active_str 0
description Thin films have been grown using silica coated germanium quantum dot (Ge@SiO2) nanoparticles (NP) as well as their phosphorus-doped analogues (P-Ge@SiO2). The Ge quantum dots (QDs) were coated through the seeding of Stöber particles. The film thickness and uniformity were investigated using aqueous solutions at a range of dilutions from the as-prepared solutions. The films have been characterized by SEM, XRD, and I/V measurements of test solar cells using doped n-type Si substrates. While the films were relatively compact they are actually made of large plaques of particles rather than a continuous layer, and the film thickness showed little significant variation with concentration for the Ge@SiO2 films; although a more usual trend was observed for the P-Ge@SiO2 films. Films grown using a solution 1/4 of the maximum concentration provided the highest solar cell efficiency. Thermal annealing of the films prior to deposition of the front and back contacts enabled a doubling in the cell efficiency, but did not show any marked increase in the density or crystallinity of the films.
published_date 2016-09-15T03:37:01Z
_version_ 1763751620830560256
score 11.014067

Similar Items