Journal article 1260 views
Threshold current of 670-nm AlGaInP strained quantum well lasers
IEEE Photonics Technology Letters, Volume: 6, Issue: 8, Pages: 910 - 912
Swansea University Authors: Paul Rees , Huw Summers
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DOI (Published version): 10.1109/68.313049
Abstract
Threshold current of 670-nm AlGaInP strained quantum well lasers
Published in: | IEEE Photonics Technology Letters |
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ISSN: | 1041-1135 1941-0174 |
Published: |
1994
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Online Access: |
Check full text
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URI: | https://cronfa.swan.ac.uk/Record/cronfa25421 |
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Item Description: |
@article summers1994,title = Threshold current of 670-nm AlGaInP strained quantum well lasers,journal = IEEE Photonics Technology Letters,year = 1994,volume = 6,number = 8,pages = 910-912,author = Smowton, P.M. and Summers, H.D. and Rees, P. and Blood, P. |
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College: |
Faculty of Science and Engineering |
Issue: |
8 |
Start Page: |
910 |
End Page: |
912 |