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Threshold current of 670-nm AlGaInP strained quantum well lasers

P.M. Smowton, H.D. Summers, P. Rees, P. Blood, Paul Rees Orcid Logo, Huw Summers Orcid Logo

IEEE Photonics Technology Letters, Volume: 6, Issue: 8, Pages: 910 - 912

Swansea University Authors: Paul Rees Orcid Logo, Huw Summers Orcid Logo

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DOI (Published version): 10.1109/68.313049

Published in: IEEE Photonics Technology Letters
ISSN: 1041-1135 1941-0174
Published: 1994
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URI: https://cronfa.swan.ac.uk/Record/cronfa25421
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Item Description: @article summers1994,title = Threshold current of 670-nm AlGaInP strained quantum well lasers,journal = IEEE Photonics Technology Letters,year = 1994,volume = 6,number = 8,pages = 910-912,author = Smowton, P.M. and Summers, H.D. and Rees, P. and Blood, P.
College: Faculty of Science and Engineering
Issue: 8
Start Page: 910
End Page: 912