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The effects of surface stripping ZnO nanorods with argon bombardment

Chris J Barnett, Olga Kryvchenkova, Nathan A Smith, Liam Kelleher, Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

Nanotechnology, Volume: 26, Issue: 41, Start page: 415701

Swansea University Authors: Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

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DOI (Published version): 10.1088/0957-4484/26/41/415701

Abstract

ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombard...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa23525
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Abstract: ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour.
Item Description: Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: ZnO, Argon bombardment, Ohmic, Schottky, Contacts
College: Faculty of Science and Engineering
Issue: 41
Start Page: 415701

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