Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

Price, A.; Muniz, Antonio Martinez

doi:10.1063/1.4918301

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Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

A. Price, Antonio Martinez Muniz

Journal of Applied Physics, Volume: 117, Issue: 16

Swansea University Author: Antonio Martinez Muniz

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DOI (Published version): 10.1063/1.4918301

Abstract

Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation...

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Published in:	Journal of Applied Physics
ISSN:	0021-8979 1089-7550
Published:	2015
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa22741

first_indexed	2015-08-02T02:04:27Z
last_indexed	2020-10-06T02:36:17Z
id	cronfa22741
recordtype	SURis
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spelling	2020-10-05T14:27:41.3042210 v2 22741 2015-08-01 Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2015-08-01 ACEM Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation using a decoupled mode decomposition has been deployed. NWFETs of different dimensions have been considered, and scattering mechanisms including acoustic, optical and polar optical phonons have been included. The effective masses were extracted from tight binding simulations. High and low drain bias have been considered. We found substantial source to drain tunnelling current and significant impact of phonon scattering on the performance of the NWFET. At low drain bias, for a 2.2 × 2.2 nm2 cross-section transistor, scattering caused a 72%, 77%, and 81% decrease in the on-current for a 6 nm, 10 nm, and 20 nm channel length, respectively. This reduction in the current due to scattering is influenced by the increase in the tunnelling current. We include the percentage tunnelling for each valley at low and high drain bias. It was also found that the strong quantisation caused the relative position of the valleys to vary with the cross-section. This had a large effect on the overall tunnelling current. The phonon-limited mobility was also calculated, finding a mobility of 950 cm2/V s at an inversion charge density of 1012 cm−2 for a 4.2 × 4.2 nm2 cross-section device. Journal Article Journal of Applied Physics 117 16 0021-8979 1089-7550 FinFets Silicon devices. Quantum Transport, NEGF 28 4 2015 2015-04-28 10.1063/1.4918301 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2020-10-05T14:27:41.3042210 2015-08-01T13:03:36.5571742 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering A. Price 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
spellingShingle	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism Antonio Martinez Muniz
title_short	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_full	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_fullStr	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_full_unstemmed	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
title_sort	Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism
author_id_str_mv	cd433784251add853672979313f838ec
author_id_fullname_str_mv	cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author	Antonio Martinez Muniz
author2	A. Price Antonio Martinez Muniz
format	Journal article
container_title	Journal of Applied Physics
container_volume	117
container_issue	16
publishDate	2015
institution	Swansea University
issn	0021-8979 1089-7550
doi_str_mv	10.1063/1.4918301
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str	0
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description	Using quantum transport simulations, the impact of electron-phonon scattering on the transfer characteristic of a gate-all-around nanowire (GaAs) field effect transistor (NWFET) has been thoroughly investigated. The Non-Equilibrium Green's Function formalism in the effective mass approximation using a decoupled mode decomposition has been deployed. NWFETs of different dimensions have been considered, and scattering mechanisms including acoustic, optical and polar optical phonons have been included. The effective masses were extracted from tight binding simulations. High and low drain bias have been considered. We found substantial source to drain tunnelling current and significant impact of phonon scattering on the performance of the NWFET. At low drain bias, for a 2.2 × 2.2 nm2 cross-section transistor, scattering caused a 72%, 77%, and 81% decrease in the on-current for a 6 nm, 10 nm, and 20 nm channel length, respectively. This reduction in the current due to scattering is influenced by the increase in the tunnelling current. We include the percentage tunnelling for each valley at low and high drain bias. It was also found that the strong quantisation caused the relative position of the valleys to vary with the cross-section. This had a large effect on the overall tunnelling current. The phonon-limited mobility was also calculated, finding a mobility of 950 cm2/V s at an inversion charge density of 1012 cm−2 for a 4.2 × 4.2 nm2 cross-section device.
published_date	2015-04-28T12:48:21Z
_version_	1821409752980127744
score	11.048237

Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

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