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Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

R. Valin, Antonio Martinez Muniz Orcid Logo, J. R. Barker

Journal of Applied Physics, Volume: 117, Issue: 16

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1063/1.4919092

Abstract

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on...

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Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa22740
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first_indexed 2015-08-02T02:04:26Z
last_indexed 2020-10-06T02:36:17Z
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spelling 2020-10-05T14:25:43.4582476 v2 22740 2015-08-01 Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2015-08-01 EEEG In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias. Journal Article Journal of Applied Physics 117 16 0021-8979 1089-7550 28 4 2015 2015-04-28 10.1063/1.4919092 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-10-05T14:25:43.4582476 2015-08-01T12:59:19.5455267 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering R. Valin 1 Antonio Martinez Muniz 0000-0001-8131-7242 2 J. R. Barker 3
title Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
spellingShingle Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
Antonio Martinez Muniz
title_short Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
title_full Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
title_fullStr Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
title_full_unstemmed Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
title_sort Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 R. Valin
Antonio Martinez Muniz
J. R. Barker
format Journal article
container_title Journal of Applied Physics
container_volume 117
container_issue 16
publishDate 2015
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/1.4919092
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.
published_date 2015-04-28T03:26:57Z
_version_ 1763750987194957824
score 11.037603

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