No Cover Image

Journal article 1047 views

Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

R. Valin, Antonio Martinez Muniz Orcid Logo, J. R. Barker

Journal of Applied Physics, Volume: 117, Issue: 16

Swansea University Author: Antonio Martinez Muniz Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1063/1.4919092

Abstract

In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on...

Full description

Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: 2015
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa22740
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.
College: Faculty of Science and Engineering
Issue: 16

Similar Items