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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, P. A. Mawby, Owen Guy Orcid Logo

Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506

Swansea University Author: Owen Guy Orcid Logo

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DOI (Published version): 10.1063/1.3462932

Published in: Applied Physics Letters
Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa19747
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first_indexed 2014-12-13T02:56:46Z
last_indexed 2018-02-09T04:55:38Z
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spelling 2014-12-12T15:10:57.0348917 v2 19747 2014-12-12 Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 2014-12-12 CHEM Journal Article Applied Physics Letters 97 1 013506 31 12 2010 2010-12-31 10.1063/1.3462932 COLLEGE NANME Chemistry COLLEGE CODE CHEM Swansea University 2014-12-12T15:10:57.0348917 2014-12-12T15:10:57.0348917 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry P. M. Gammon 1 A. Pérez-Tomás 2 M. R. Jennings 3 O. J. Guy 4 N. Rimmer 5 J. Llobet 6 N. Mestres 7 P. Godignon 8 M. Placidi 9 M. Zabala 10 J. A. Covington 11 P. A. Mawby 12 Owen Guy 0000-0002-6449-4033 13
title Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
spellingShingle Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
Owen Guy
title_short Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_full Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_fullStr Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_full_unstemmed Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_sort Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
author_id_str_mv c7fa5949b8528e048c5b978005f66794
author_id_fullname_str_mv c7fa5949b8528e048c5b978005f66794_***_Owen Guy
author Owen Guy
author2 P. M. Gammon
A. Pérez-Tomás
M. R. Jennings
O. J. Guy
N. Rimmer
J. Llobet
N. Mestres
P. Godignon
M. Placidi
M. Zabala
J. A. Covington
P. A. Mawby
Owen Guy
format Journal article
container_title Applied Physics Letters
container_volume 97
container_issue 1
container_start_page 013506
publishDate 2010
institution Swansea University
doi_str_mv 10.1063/1.3462932
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 0
active_str 0
published_date 2010-12-31T03:23:15Z
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score 11.037603

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