Journal article 1217 views
Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
P. M. Gammon,
A. Pérez-Tomás,
M. R. Jennings,
O. J. Guy,
N. Rimmer,
J. Llobet,
N. Mestres,
P. Godignon,
M. Placidi,
M. Zabala,
J. A. Covington,
P. A. Mawby,
Owen Guy 
Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506
Swansea University Author:
Owen Guy
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DOI (Published version): 10.1063/1.3462932
Abstract
Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
| Published in: | Applied Physics Letters |
|---|---|
| Published: |
2010
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa19747 |
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| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
1 |
| Start Page: |
013506 |