Journal article 995 views
Investigation of resistance in n-doped Si wires using NEGF formalism
Swansea University Author:
Antonio Martinez Muniz
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DOI (Published version): 10.1109/sced.2009.4800522
Abstract
Investigation of resistance in n-doped Si wires using NEGF formalism
Published: |
2009
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URI: | https://cronfa.swan.ac.uk/Record/cronfa10585 |
College: |
Faculty of Science and Engineering |
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