No Cover Image

Journal article 6 views

CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure

Ochai Oklobia, Stuart Irvine, Kieran Curson Orcid Logo, Tom Dunlop Orcid Logo, Ciaran Llewelyn Orcid Logo, Michael Walls Orcid Logo, Dingyuan Lu, Gang Xiong, Dan Lamb Orcid Logo

Solar Energy Materials and Solar Cells, Volume: 282, Start page: 113440

Swansea University Authors: Ochai Oklobia, Stuart Irvine, Tom Dunlop Orcid Logo, Ciaran Llewelyn Orcid Logo, Dan Lamb Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1016/j.solmat.2025.113440

Abstract

The analyses of surface morphology and microstructural properties of CdTe thin film absorber layers, deposited by metal organic chemical vapour deposition (MOCVD) on CdS/CdZnS/FTO-coated glass substrates as a function of different growth conditions (non–saturated or Cd–saturated growth condition and...

Full description

Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248 1879-3398
Published: Elsevier BV 2025
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa68735
first_indexed 2025-01-24T11:23:41Z
last_indexed 2025-01-24T14:46:03Z
id cronfa68735
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2025-01-24T11:23:39.6442602</datestamp><bib-version>v2</bib-version><id>68735</id><entry>2025-01-24</entry><title>CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure</title><swanseaauthors><author><sid>d447e8d0345473fa625813546bccc592</sid><firstname>Ochai</firstname><surname>Oklobia</surname><name>Ochai Oklobia</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>1ddb966eccef99aa96e87f1ea4917f1f</sid><firstname>Stuart</firstname><surname>Irvine</surname><name>Stuart Irvine</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>809395460ab1e6b53a906b136d919c41</sid><ORCID>0000-0002-5851-8713</ORCID><firstname>Tom</firstname><surname>Dunlop</surname><name>Tom Dunlop</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>91e58657b172ff1c49c86599dd049d72</sid><ORCID>0009-0005-4074-5204</ORCID><firstname>Ciaran</firstname><surname>Llewelyn</surname><name>Ciaran Llewelyn</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>decd92a653848a357f0c6f8e38e0aea0</sid><ORCID>0000-0002-4762-4641</ORCID><firstname>Dan</firstname><surname>Lamb</surname><name>Dan Lamb</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2025-01-24</date><deptcode>EAAS</deptcode><abstract>The analyses of surface morphology and microstructural properties of CdTe thin film absorber layers, deposited by metal organic chemical vapour deposition (MOCVD) on CdS/CdZnS/FTO-coated glass substrates as a function of different growth conditions (non&#x2013;saturated or Cd&#x2013;saturated growth condition and post&#x2013;growth CdCl2 heat treatment) are presented. Scanning electron microscopy (SEM) images showed that the CdTe absorber surface morphology was relatively smoother with Cd-saturated growth compared to non-saturated conditions, while using a similar II/VI precursor partial pressure ratio. Microstructural characterisation using electron back scatter diffraction (EBSD) measurements indicate a strong influence of the II/VI ratios on the crystalline structure and degree of recrystallisation in Cd&#x2013;saturated deposited CdTe absorber layers. CdTe absorber layers from a low II/VI ratio of 2 showed a strong Te(A1) Raman spectra band, characteristic of a Te rich composition, whilst a Cd&#x2013;saturated composition was confirmed in the case of II/VI ratio of 4, as Te(A1) band was significantly suppressed. Cd&#x2013;saturated grown CdTe:As (II/VI = 4), combined with a CdCl2 activation process at 440 &#xB0;C, yielded optimum, highly randomized textured absorber with large grains. Reduced [111] oriented grains and suppression of Te(A1) mode was found to lead to higher VOC in devices. A high efficiency CdTe:As solar cell with a high VOC of 825 mV was measured based on the optimum growth condition for the absorber layers.</abstract><type>Journal Article</type><journal>Solar Energy Materials and Solar Cells</journal><volume>282</volume><journalNumber/><paginationStart>113440</paginationStart><paginationEnd/><publisher>Elsevier BV</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0927-0248</issnPrint><issnElectronic>1879-3398</issnElectronic><keywords>MOCVD; CdTe; Cd-saturated growth; Roughness; Microstructure; Texture randomization; Micro-Raman spectroscopy</keywords><publishedDay>1</publishedDay><publishedMonth>4</publishedMonth><publishedYear>2025</publishedYear><publishedDate>2025-04-01</publishedDate><doi>10.1016/j.solmat.2025.113440</doi><url/><notes/><college>COLLEGE NANME</college><department>Engineering and Applied Sciences School</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EAAS</DepartmentCode><institution>Swansea University</institution><apcterm>SU Library paid the OA fee (TA Institutional Deal)</apcterm><funders>Funding provided by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom via the grant EP/W000555/1 and EPW00092X/1. The European Regional Development Fund (ERDF) and the Welsh European Funding Office (WEFO) which funded the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II) and supported this research, is gratefully acknowledged. The authors also acknowledge support from First Solar, Inc. Access to characterisation equipment in Swansea University Advanced Imaging of Materials (AIM) facility, funded in part by the EPSRC (EP/M028267/1) and the European Regional Development Fund through the Welsh Government (80708) is acknowledged. Thanks also to Mr. Steve Jones for carrying out growth runs of the CdTe:As absorber layers, investigated in this work and for technical assistance.</funders><projectreference/><lastEdited>2025-01-24T11:23:39.6442602</lastEdited><Created>2025-01-24T11:09:53.6648841</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Materials Science and Engineering</level></path><authors><author><firstname>Ochai</firstname><surname>Oklobia</surname><order>1</order></author><author><firstname>Stuart</firstname><surname>Irvine</surname><order>2</order></author><author><firstname>Kieran</firstname><surname>Curson</surname><orcid>0009-0000-6054-3451</orcid><order>3</order></author><author><firstname>Tom</firstname><surname>Dunlop</surname><orcid>0000-0002-5851-8713</orcid><order>4</order></author><author><firstname>Ciaran</firstname><surname>Llewelyn</surname><orcid>0009-0005-4074-5204</orcid><order>5</order></author><author><firstname>Michael</firstname><surname>Walls</surname><orcid>0000-0003-4868-2621</orcid><order>6</order></author><author><firstname>Dingyuan</firstname><surname>Lu</surname><order>7</order></author><author><firstname>Gang</firstname><surname>Xiong</surname><order>8</order></author><author><firstname>Dan</firstname><surname>Lamb</surname><orcid>0000-0002-4762-4641</orcid><order>9</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2025-01-24T11:23:39.6442602 v2 68735 2025-01-24 CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure d447e8d0345473fa625813546bccc592 Ochai Oklobia Ochai Oklobia true false 1ddb966eccef99aa96e87f1ea4917f1f Stuart Irvine Stuart Irvine true false 809395460ab1e6b53a906b136d919c41 0000-0002-5851-8713 Tom Dunlop Tom Dunlop true false 91e58657b172ff1c49c86599dd049d72 0009-0005-4074-5204 Ciaran Llewelyn Ciaran Llewelyn true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false 2025-01-24 EAAS The analyses of surface morphology and microstructural properties of CdTe thin film absorber layers, deposited by metal organic chemical vapour deposition (MOCVD) on CdS/CdZnS/FTO-coated glass substrates as a function of different growth conditions (non–saturated or Cd–saturated growth condition and post–growth CdCl2 heat treatment) are presented. Scanning electron microscopy (SEM) images showed that the CdTe absorber surface morphology was relatively smoother with Cd-saturated growth compared to non-saturated conditions, while using a similar II/VI precursor partial pressure ratio. Microstructural characterisation using electron back scatter diffraction (EBSD) measurements indicate a strong influence of the II/VI ratios on the crystalline structure and degree of recrystallisation in Cd–saturated deposited CdTe absorber layers. CdTe absorber layers from a low II/VI ratio of 2 showed a strong Te(A1) Raman spectra band, characteristic of a Te rich composition, whilst a Cd–saturated composition was confirmed in the case of II/VI ratio of 4, as Te(A1) band was significantly suppressed. Cd–saturated grown CdTe:As (II/VI = 4), combined with a CdCl2 activation process at 440 °C, yielded optimum, highly randomized textured absorber with large grains. Reduced [111] oriented grains and suppression of Te(A1) mode was found to lead to higher VOC in devices. A high efficiency CdTe:As solar cell with a high VOC of 825 mV was measured based on the optimum growth condition for the absorber layers. Journal Article Solar Energy Materials and Solar Cells 282 113440 Elsevier BV 0927-0248 1879-3398 MOCVD; CdTe; Cd-saturated growth; Roughness; Microstructure; Texture randomization; Micro-Raman spectroscopy 1 4 2025 2025-04-01 10.1016/j.solmat.2025.113440 COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University SU Library paid the OA fee (TA Institutional Deal) Funding provided by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom via the grant EP/W000555/1 and EPW00092X/1. The European Regional Development Fund (ERDF) and the Welsh European Funding Office (WEFO) which funded the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II) and supported this research, is gratefully acknowledged. The authors also acknowledge support from First Solar, Inc. Access to characterisation equipment in Swansea University Advanced Imaging of Materials (AIM) facility, funded in part by the EPSRC (EP/M028267/1) and the European Regional Development Fund through the Welsh Government (80708) is acknowledged. Thanks also to Mr. Steve Jones for carrying out growth runs of the CdTe:As absorber layers, investigated in this work and for technical assistance. 2025-01-24T11:23:39.6442602 2025-01-24T11:09:53.6648841 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Ochai Oklobia 1 Stuart Irvine 2 Kieran Curson 0009-0000-6054-3451 3 Tom Dunlop 0000-0002-5851-8713 4 Ciaran Llewelyn 0009-0005-4074-5204 5 Michael Walls 0000-0003-4868-2621 6 Dingyuan Lu 7 Gang Xiong 8 Dan Lamb 0000-0002-4762-4641 9
title CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
spellingShingle CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
Ochai Oklobia
Stuart Irvine
Tom Dunlop
Ciaran Llewelyn
Dan Lamb
title_short CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
title_full CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
title_fullStr CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
title_full_unstemmed CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
title_sort CdTe absorber layers grown under Cd-rich conditions by MOCVD: Impact on surface morphology and structure
author_id_str_mv d447e8d0345473fa625813546bccc592
1ddb966eccef99aa96e87f1ea4917f1f
809395460ab1e6b53a906b136d919c41
91e58657b172ff1c49c86599dd049d72
decd92a653848a357f0c6f8e38e0aea0
author_id_fullname_str_mv d447e8d0345473fa625813546bccc592_***_Ochai Oklobia
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
809395460ab1e6b53a906b136d919c41_***_Tom Dunlop
91e58657b172ff1c49c86599dd049d72_***_Ciaran Llewelyn
decd92a653848a357f0c6f8e38e0aea0_***_Dan Lamb
author Ochai Oklobia
Stuart Irvine
Tom Dunlop
Ciaran Llewelyn
Dan Lamb
author2 Ochai Oklobia
Stuart Irvine
Kieran Curson
Tom Dunlop
Ciaran Llewelyn
Michael Walls
Dingyuan Lu
Gang Xiong
Dan Lamb
format Journal article
container_title Solar Energy Materials and Solar Cells
container_volume 282
container_start_page 113440
publishDate 2025
institution Swansea University
issn 0927-0248
1879-3398
doi_str_mv 10.1016/j.solmat.2025.113440
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 0
active_str 0
description The analyses of surface morphology and microstructural properties of CdTe thin film absorber layers, deposited by metal organic chemical vapour deposition (MOCVD) on CdS/CdZnS/FTO-coated glass substrates as a function of different growth conditions (non–saturated or Cd–saturated growth condition and post–growth CdCl2 heat treatment) are presented. Scanning electron microscopy (SEM) images showed that the CdTe absorber surface morphology was relatively smoother with Cd-saturated growth compared to non-saturated conditions, while using a similar II/VI precursor partial pressure ratio. Microstructural characterisation using electron back scatter diffraction (EBSD) measurements indicate a strong influence of the II/VI ratios on the crystalline structure and degree of recrystallisation in Cd–saturated deposited CdTe absorber layers. CdTe absorber layers from a low II/VI ratio of 2 showed a strong Te(A1) Raman spectra band, characteristic of a Te rich composition, whilst a Cd–saturated composition was confirmed in the case of II/VI ratio of 4, as Te(A1) band was significantly suppressed. Cd–saturated grown CdTe:As (II/VI = 4), combined with a CdCl2 activation process at 440 °C, yielded optimum, highly randomized textured absorber with large grains. Reduced [111] oriented grains and suppression of Te(A1) mode was found to lead to higher VOC in devices. A high efficiency CdTe:As solar cell with a high VOC of 825 mV was measured based on the optimum growth condition for the absorber layers.
published_date 2025-04-01T02:45:50Z
_version_ 1822459010395144192
score 11.048604

Similar Items