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Broadband photodetector based on NiO/TiO2/n-Si heterojunction

Xingzhao Ma, Libin Tang, Yuping Zhang Orcid Logo, Wenbin Zuo, Vincent Teng Orcid Logo, Gang Wu

Infrared Physics & Technology, Volume: 139, Start page: 105305

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1016/j.infrared.2024.105305

Abstract

Broadband photodetector (PD) that can response to a broad spectrum from ultraviolet (UV) to near infrared (NIR) has attracted much research activities due to its many potential applications in a variety of fields, such as image sensing, optical communications, environmental monitoring, and day and n...

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Published in: Infrared Physics & Technology
ISSN: 1350-4495
Published: Elsevier BV 2024
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URI: https://cronfa.swan.ac.uk/Record/cronfa68358
first_indexed 2024-11-27T19:46:36Z
last_indexed 2025-01-13T20:34:23Z
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spelling 2025-01-13T14:33:22.9535741 v2 68358 2024-11-27 Broadband photodetector based on NiO/TiO2/n-Si heterojunction 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2024-11-27 ACEM Broadband photodetector (PD) that can response to a broad spectrum from ultraviolet (UV) to near infrared (NIR) has attracted much research activities due to its many potential applications in a variety of fields, such as image sensing, optical communications, environmental monitoring, and day and night surveillance. In this work, a high-performance broadband PD based on NiO/TiO2/n-Si heterojunction is reported. The device consisted of a 2 nm TiO2 tunnelling layer, which was deposited by magnetron sputtering technique, between NiO and n-Si. The heterojunction photodetector (HPD) exhibits high sensitivity toward a broad spectrum from 341 to 1050 nm. It yields maximal responsivity of 1.47, 0.58, 0.82, 0.97, 1.62 and 1.21 A/W under 341, 365, 660, 850, 940 and 1050 nm illumination, respectively, at a bias voltage of −1 V. The corresponding detectivities are between 2.6 × 1011 and 7.3 × 1011 Jones. The external quantum efficiency (EQE) as high as 553 % indicates a remarkable gain of the HPD. Notably, the HPD shows self-powered characteristics with an ultrahigh responsivity of 1.15 A/W and detectivity of 6.38 × 1012 Jones. In addition, the fast response speed of less than 0.1 s is obtained under zero bias. The results demonstrate the development of low-cost, self-powered and high-performance silicon based broadband HPD. Journal Article Infrared Physics &amp; Technology 139 105305 Elsevier BV 1350-4495 Broadband photodetector; Self-powered; Heterojunction; NiO; TiO2; Silicon 1 6 2024 2024-06-01 10.1016/j.infrared.2024.105305 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University National Key Research and Development Program of China (Grant No. 2019YFB2203404) Yunnan Province Innovation Team Project (Grant No.2018HC020). 2025-01-13T14:33:22.9535741 2024-11-27T14:02:21.3680532 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Xingzhao Ma 1 Libin Tang 2 Yuping Zhang 0000-0003-3448-1749 3 Wenbin Zuo 4 Vincent Teng 0000-0003-4325-8573 5 Gang Wu 6
title Broadband photodetector based on NiO/TiO2/n-Si heterojunction
spellingShingle Broadband photodetector based on NiO/TiO2/n-Si heterojunction
Vincent Teng
title_short Broadband photodetector based on NiO/TiO2/n-Si heterojunction
title_full Broadband photodetector based on NiO/TiO2/n-Si heterojunction
title_fullStr Broadband photodetector based on NiO/TiO2/n-Si heterojunction
title_full_unstemmed Broadband photodetector based on NiO/TiO2/n-Si heterojunction
title_sort Broadband photodetector based on NiO/TiO2/n-Si heterojunction
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Xingzhao Ma
Libin Tang
Yuping Zhang
Wenbin Zuo
Vincent Teng
Gang Wu
format Journal article
container_title Infrared Physics &amp; Technology
container_volume 139
container_start_page 105305
publishDate 2024
institution Swansea University
issn 1350-4495
doi_str_mv 10.1016/j.infrared.2024.105305
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description Broadband photodetector (PD) that can response to a broad spectrum from ultraviolet (UV) to near infrared (NIR) has attracted much research activities due to its many potential applications in a variety of fields, such as image sensing, optical communications, environmental monitoring, and day and night surveillance. In this work, a high-performance broadband PD based on NiO/TiO2/n-Si heterojunction is reported. The device consisted of a 2 nm TiO2 tunnelling layer, which was deposited by magnetron sputtering technique, between NiO and n-Si. The heterojunction photodetector (HPD) exhibits high sensitivity toward a broad spectrum from 341 to 1050 nm. It yields maximal responsivity of 1.47, 0.58, 0.82, 0.97, 1.62 and 1.21 A/W under 341, 365, 660, 850, 940 and 1050 nm illumination, respectively, at a bias voltage of −1 V. The corresponding detectivities are between 2.6 × 1011 and 7.3 × 1011 Jones. The external quantum efficiency (EQE) as high as 553 % indicates a remarkable gain of the HPD. Notably, the HPD shows self-powered characteristics with an ultrahigh responsivity of 1.15 A/W and detectivity of 6.38 × 1012 Jones. In addition, the fast response speed of less than 0.1 s is obtained under zero bias. The results demonstrate the development of low-cost, self-powered and high-performance silicon based broadband HPD.
published_date 2024-06-01T14:38:40Z
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score 11.048042

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