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Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States

Stefan Zeiske, Nasim Zarrabi, Oskar Sandberg Orcid Logo, Sam Gielen Orcid Logo, Wouter Maes Orcid Logo, Paul Meredith Orcid Logo, Ardalan Armin

Advanced Materials, Volume: 36, Issue: 36, Start page: 2405061

Swansea University Authors: Stefan Zeiske, Nasim Zarrabi, Oskar Sandberg Orcid Logo, Paul Meredith Orcid Logo, Ardalan Armin

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DOI (Published version): 10.1002/adma.202405061

Abstract

Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrow...

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Published in: Advanced Materials
ISSN: 0935-9648 1521-4095
Published: Wiley 2024
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URI: https://cronfa.swan.ac.uk/Record/cronfa67077
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spelling 2025-02-13T15:37:57.6757901 v2 67077 2024-07-11 Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States 0c9c5b89df9ac882c3e09dd1a9f28fc5 Stefan Zeiske Stefan Zeiske true false d20976a5892074dae0368a4bb4433f76 Nasim Zarrabi Nasim Zarrabi true false 9e91512a54d5aee66cd77851a96ba747 0000-0003-3778-8746 Oskar Sandberg Oskar Sandberg true false 31e8fe57fa180d418afd48c3af280c2e 0000-0002-9049-7414 Paul Meredith Paul Meredith true false 22b270622d739d81e131bec7a819e2fd Ardalan Armin Ardalan Armin true false 2024-07-11 BGPS Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of “trap-doping” in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature. Journal Article Advanced Materials 36 36 2405061 Wiley 0935-9648 1521-4095 bulk-heterojunction; mid-gap trap states; organic semiconductors; photodetectors; SWIR; thin films; up-conversion 5 9 2024 2024-09-05 10.1002/adma.202405061 COLLEGE NANME Biosciences Geography and Physics School COLLEGE CODE BGPS Swansea University SU Library paid the OA fee (TA Institutional Deal) Engineering and Physical Sciences Research Council - EP/T028513/1; Research Foundation – Flanders - 1266923N 2025-02-13T15:37:57.6757901 2024-07-11T16:25:01.3990904 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Stefan Zeiske 1 Nasim Zarrabi 2 Oskar Sandberg 0000-0003-3778-8746 3 Sam Gielen 0000-0002-9941-1453 4 Wouter Maes 0000-0001-7883-3393 5 Paul Meredith 0000-0002-9049-7414 6 Ardalan Armin 7 67077__30980__c9a988249df047b9bd94600740b02826.pdf 67077.VoR.pdf 2024-07-25T13:13:17.6247365 Output 2031311 application/pdf Version of Record true © 2024 The Author(s). This is an open access article under the terms of the Creative Commons Attribution License. true eng http://creativecommons.org/licenses/by/4.0/
title Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
spellingShingle Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
Stefan Zeiske
Nasim Zarrabi
Oskar Sandberg
Paul Meredith
Ardalan Armin
title_short Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
title_full Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
title_fullStr Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
title_full_unstemmed Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
title_sort Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up‐Conversion of Mid‐Gap Trap States
author_id_str_mv 0c9c5b89df9ac882c3e09dd1a9f28fc5
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author_id_fullname_str_mv 0c9c5b89df9ac882c3e09dd1a9f28fc5_***_Stefan Zeiske
d20976a5892074dae0368a4bb4433f76_***_Nasim Zarrabi
9e91512a54d5aee66cd77851a96ba747_***_Oskar Sandberg
31e8fe57fa180d418afd48c3af280c2e_***_Paul Meredith
22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin
author Stefan Zeiske
Nasim Zarrabi
Oskar Sandberg
Paul Meredith
Ardalan Armin
author2 Stefan Zeiske
Nasim Zarrabi
Oskar Sandberg
Sam Gielen
Wouter Maes
Paul Meredith
Ardalan Armin
format Journal article
container_title Advanced Materials
container_volume 36
container_issue 36
container_start_page 2405061
publishDate 2024
institution Swansea University
issn 0935-9648
1521-4095
doi_str_mv 10.1002/adma.202405061
publisher Wiley
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
document_store_str 1
active_str 0
description Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of “trap-doping” in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature.
published_date 2024-09-05T08:17:17Z
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