Native point defects of semiconducting layered Bi2O2Se

Li, Huanglong; Xu, Xintong; Zhang, Yi; Gillen, Roland; Shi, Luping; Robertson, John

doi:10.1038/s41598-018-29385-8

Journal article 121 views 37 downloads

Native point defects of semiconducting layered Bi2O2Se

Huanglong Li, Xintong Xu, Yi Zhang, Roland Gillen

, Luping Shi, John Robertson

Scientific Reports, Volume: 8, Issue: 1

Swansea University Author: Roland Gillen

PDF | Version of Record

This article is licensed under a Creative Commons Attribution 4.0 International License.
Download (1.87MB)

Check full text

DOI (Published version): 10.1038/s41598-018-29385-8

Abstract

Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-pow...

Full description

Published in:	Scientific Reports
ISSN:	2045-2322
Published:	Springer Science and Business Media LLC 2018
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa66668

first_indexed	2024-08-14T12:37:37Z
last_indexed	2024-11-25T14:18:39Z
id	cronfa66668
recordtype	SURis
fullrecord	<?xml version="1.0"?><rfc1807><datestamp>2024-08-14T13:39:57.4195118</datestamp><bib-version>v2</bib-version><id>66668</id><entry>2024-06-11</entry><title>Native point defects of semiconducting layered Bi2O2Se</title><swanseaauthors><author><sid>8fd99815709ad1e4ae52e27f63257604</sid><ORCID>0000-0002-7913-0953</ORCID><firstname>Roland</firstname><surname>Gillen</surname><name>Roland Gillen</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2024-06-11</date><deptcode>ACEM</deptcode><abstract>Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material.</abstract><type>Journal Article</type><journal>Scientific Reports</journal><volume>8</volume><journalNumber>1</journalNumber><paginationStart/><paginationEnd/><publisher>Springer Science and Business Media LLC</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint/><issnElectronic>2045-2322</issnElectronic><keywords/><publishedDay>19</publishedDay><publishedMonth>7</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-07-19</publishedDate><doi>10.1038/s41598-018-29385-8</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm>Another institution paid the OA fee</apcterm><funders>H. Li thanks Beijing Natural Science Foundation (No. 4164087) and National Natural Science Foundation (No. 61704096) for financial support. R. Gillen thanks Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Engineering of Advanced Materials (project EXC 315) (Bridge Funding) for financial support. L.P. Shi thanks National Natural Science foundation (No. 61603209, 61475080, 61327902), SuZhou-Tsinghua innovation leading program (2016SZ0102) and Beijing Innovation Centre for Future Chip for financial support. J. Robertson thanks EPSRC for financial support. Computational resources are provided by high performance computing service of Tsinghua National Laboratory for Information Science and Technology and high performance computing service of University of Cambridge.</funders><projectreference/><lastEdited>2024-08-14T13:39:57.4195118</lastEdited><Created>2024-06-11T12:54:12.2101654</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Huanglong</firstname><surname>Li</surname><order>1</order></author><author><firstname>Xintong</firstname><surname>Xu</surname><order>2</order></author><author><firstname>Yi</firstname><surname>Zhang</surname><order>3</order></author><author><firstname>Roland</firstname><surname>Gillen</surname><orcid>0000-0002-7913-0953</orcid><order>4</order></author><author><firstname>Luping</firstname><surname>Shi</surname><order>5</order></author><author><firstname>John</firstname><surname>Robertson</surname><order>6</order></author></authors><documents><document><filename>66668__31108__fa6f9008b3dd48e5a65a584ff2c915fb.pdf</filename><originalFilename>66668.VoR.pdf</originalFilename><uploaded>2024-08-14T13:39:04.8655994</uploaded><type>Output</type><contentLength>1959538</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>This article is licensed under a Creative Commons Attribution 4.0 International License.</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>http://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling	2024-08-14T13:39:57.4195118 v2 66668 2024-06-11 Native point defects of semiconducting layered Bi2O2Se 8fd99815709ad1e4ae52e27f63257604 0000-0002-7913-0953 Roland Gillen Roland Gillen true false 2024-06-11 ACEM Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material. Journal Article Scientific Reports 8 1 Springer Science and Business Media LLC 2045-2322 19 7 2018 2018-07-19 10.1038/s41598-018-29385-8 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee H. Li thanks Beijing Natural Science Foundation (No. 4164087) and National Natural Science Foundation (No. 61704096) for financial support. R. Gillen thanks Deutsche Forschungsgemeinschaft (DFG) within the Cluster of Excellence Engineering of Advanced Materials (project EXC 315) (Bridge Funding) for financial support. L.P. Shi thanks National Natural Science foundation (No. 61603209, 61475080, 61327902), SuZhou-Tsinghua innovation leading program (2016SZ0102) and Beijing Innovation Centre for Future Chip for financial support. J. Robertson thanks EPSRC for financial support. Computational resources are provided by high performance computing service of Tsinghua National Laboratory for Information Science and Technology and high performance computing service of University of Cambridge. 2024-08-14T13:39:57.4195118 2024-06-11T12:54:12.2101654 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Huanglong Li 1 Xintong Xu 2 Yi Zhang 3 Roland Gillen 0000-0002-7913-0953 4 Luping Shi 5 John Robertson 6 66668__31108__fa6f9008b3dd48e5a65a584ff2c915fb.pdf 66668.VoR.pdf 2024-08-14T13:39:04.8655994 Output 1959538 application/pdf Version of Record true This article is licensed under a Creative Commons Attribution 4.0 International License. true eng http://creativecommons.org/licenses/by/4.0/
title	Native point defects of semiconducting layered Bi2O2Se
spellingShingle	Native point defects of semiconducting layered Bi2O2Se Roland Gillen
title_short	Native point defects of semiconducting layered Bi2O2Se
title_full	Native point defects of semiconducting layered Bi2O2Se
title_fullStr	Native point defects of semiconducting layered Bi2O2Se
title_full_unstemmed	Native point defects of semiconducting layered Bi2O2Se
title_sort	Native point defects of semiconducting layered Bi2O2Se
author_id_str_mv	8fd99815709ad1e4ae52e27f63257604
author_id_fullname_str_mv	8fd99815709ad1e4ae52e27f63257604_***_Roland Gillen
author	Roland Gillen
author2	Huanglong Li Xintong Xu Yi Zhang Roland Gillen Luping Shi John Robertson
format	Journal article
container_title	Scientific Reports
container_volume	8
container_issue	1
publishDate	2018
institution	Swansea University
issn	2045-2322
doi_str_mv	10.1038/s41598-018-29385-8
publisher	Springer Science and Business Media LLC
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str	1
active_str	0
description	Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material.
published_date	2018-07-19T08:25:36Z
_version_	1821302626154708992
score	11.151597

Native point defects of semiconducting layered Bi2O2Se

Similar Items