Journal article 233 views
Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
H. L. Liang,
Z. X. Mei,
Q. H. Zhang,
L. Gu,
S. Liang,
Yaonan Hou 
,
D. Q. Ye,
C. Z. Gu,
R. C. Yu,
X. L. Du
,
D. Q. Ye,
C. Z. Gu,
R. C. Yu,
X. L. Du
Applied Physics Letters, Volume: 98, Issue: 22
Swansea University Author:
Yaonan Hou
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.3595342
Abstract
Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
| Published in: | Applied Physics Letters |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| Published: |
AIP Publishing
2011
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa65325 |
| Keywords: |
Band gap, Heterostructures, Microelectronics, Optoelectronic devices, Photodetectors, Electron diffraction, Epitaxy, Crystal structure, Oxidation processes, Chemical compounds |
|---|---|
| College: |
Faculty of Science and Engineering |
| Issue: |
22 |