Journal article 409 views
Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu,
Zengxia Mei,
Yaonan Hou,
Huili Liang,
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Andrej Kuznetsov,
Xiaolong Du
Scientific Reports, Volume: 5, Issue: 1
Swansea University Author: Yaonan Hou
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DOI (Published version): 10.1038/srep15516
Abstract
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has...
| Published in: | Scientific Reports |
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| ISSN: | 2045-2322 |
| Published: |
Springer Science and Business Media LLC
2015
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa65313 |
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| Abstract: |
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1–xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 1019 F/cm3.The dramatically increased carrier concentration (2.85 × 1017 cm−3 vs ~1014 cm−3) and decreased resistivity (129 Ω · cm vs ~106 Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 109 cm Hz1/2/W to 3.58 × 1010 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
1 |