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Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

Y. Zhang, J. Bai, Yaonan Hou Orcid Logo, X. Yu Orcid Logo, Y. Gong, R. M. Smith Orcid Logo, T. Wang

Applied Physics Letters, Volume: 109, Issue: 24

Swansea University Author: Yaonan Hou Orcid Logo

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DOI (Published version): 10.1063/1.4972403

Abstract

In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa65304
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spelling 2024-04-09T12:57:44.4437495 v2 65304 2023-12-14 Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2023-12-14 ACEM In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]. This can be achieved by carefully designing micro-rod templates. Based on transmission electron microscopy and photoluminescence measurements, it has been found that the micro-rod diameter plays a vital role in effectively reducing both the dislocation density and the basal staking fault (BSF) density of the overgrown (11-22) GaN, but in different manners. The BSF density reduces monotonically with increasing the micro-rod diameter from 2 to 5 μm, and then starts to be saturated when the micro-rod diameter further increases. In contrast, the dislocation density reduces significantly when the micro-rod diameter increases from 2 to 4 μm, and then starts to increase when the diameter further increases to 5 μm. Furthermore, employing shorter micro-rods is useful for removing additional BSFs, leading to further improvement in crystal quality. The results presented provide a very promising approach to eventually achieving (11-22) semi-polar III-nitride laser diodes. Journal Article Applied Physics Letters 109 24 AIP Publishing 0003-6951 1077-3118 16 12 2016 2016-12-16 10.1063/1.4972403 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) via Grant Nos. EP/M015181/1 and EP/L017024/1. 2024-04-09T12:57:44.4437495 2023-12-14T16:29:21.7174633 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Y. Zhang 1 J. Bai 2 Yaonan Hou 0000-0001-9461-3841 3 X. Yu 0000-0002-3797-9019 4 Y. Gong 5 R. M. Smith 0000-0002-7718-7796 6 T. Wang 7 65304__29958__26488bc9f30e4579822894480b04c7ca.pdf 65304.VOR.pdf 2024-04-09T12:56:05.4993770 Output 1163674 application/pdf Version of Record true Copyright 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/
title Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
spellingShingle Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
Yaonan Hou
title_short Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
title_full Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
title_fullStr Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
title_full_unstemmed Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
title_sort Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Y. Zhang
J. Bai
Yaonan Hou
X. Yu
Y. Gong
R. M. Smith
T. Wang
format Journal article
container_title Applied Physics Letters
container_volume 109
container_issue 24
publishDate 2016
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.4972403
publisher AIP Publishing
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
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description In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]. This can be achieved by carefully designing micro-rod templates. Based on transmission electron microscopy and photoluminescence measurements, it has been found that the micro-rod diameter plays a vital role in effectively reducing both the dislocation density and the basal staking fault (BSF) density of the overgrown (11-22) GaN, but in different manners. The BSF density reduces monotonically with increasing the micro-rod diameter from 2 to 5 μm, and then starts to be saturated when the micro-rod diameter further increases. In contrast, the dislocation density reduces significantly when the micro-rod diameter increases from 2 to 4 μm, and then starts to increase when the diameter further increases to 5 μm. Furthermore, employing shorter micro-rods is useful for removing additional BSFs, leading to further improvement in crystal quality. The results presented provide a very promising approach to eventually achieving (11-22) semi-polar III-nitride laser diodes.
published_date 2016-12-16T14:29:18Z
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score 11.048626

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